polyfet rf devices
L2801
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
low feedback and output capacitances
resulting in high F
t
transistors with high
input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
15.0 Watts Single Ended
Package Style S02
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.40 C/W
Maximum
Junction
Temperature
o
200 C
Storage
Temperature
o
o
-65 C to 150 C
DC Drain
Current
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
3.0 A
RF CHARACTERISTICS (
SYMBOL
Gps
PARAMETER
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
MIN
12
55
TYP
15.0 WATTS OUTPUT )
MAX
UNITS
dB
%
20:1
TEST CONDITIONS
Idq = 0.40 A, Vds =
28.0
V, F =
1,000
MHz
Idq = 0.40 A, Vds =
28.0
V, F =
1,000
MHz
η
VSWR
Relative Idq = 0.40 A, Vds =
28.0
V, F =
1,000
MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
PARAMETER
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
1
0.8
0.90
5.50
30.0
1.0
15.0
MIN
65
1.0
1
7
TYP
MAX
UNITS
V
mA
uA
V
Mho
Ohm
Amp
pF
pF
pF
TEST CONDITIONS
Ids =
0.10 mA, Vgs = 0V
Vds = 28.0 V, Vgs = 0V
Vds = 0V Vgs = 30V
Ids = 0.10 A, Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 2.50 A
Vgs = 20V, Vds = 10V
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
L2801
POUT VS PIN GRAPH
L2801 POUT VS PIN F=1000 MHZ; IDQ=0.4A; VDS=28V
100
CAPACITANCE VS VOLTAGE
L2B 1 DIE CAPACITANCE
22
20
18
16
14
12
10
8
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
POUT
16.00
Ciss
14.00
10
Coss
12.00
1
Crss
Efficiency = 55%
10.00
8.00
2
GAIN
0.1
0
5
10
15
20
25
30
PIN IN WATTS
VDS IN VOLTS
IV CURVE
L2A 1 DICE IV
6
100
ID & GM VS VGS
L2B 1 DIE
ID, GM vs VG
5
4
ID IN AMPS
10
ID
3
2
1
1
GM
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
VDS IN VOLTS
Vg=6v
vg=8v
14
vg=10v
16
18
vg=12v
20
0.1
0
2
4
6
8
10
12
14
Vgs in Volts
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 04/27/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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