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M29W040B120N1F

Description
512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
Categorystorage    storage   
File Size149KB,20 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M29W040B120N1F Overview

512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32

M29W040B120N1F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction8 X 20 MM, LEAD FREE, PLASTIC, TSOP-32
Contacts32
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time90 ns
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G32
JESD-609 codee3/e6
length18.4 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN/TIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width8 mm
M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs per Byte typical
8 UNIFORM 64 Kbytes MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
PLCC32 (K)
TSOP32 (N)
8 x 20mm
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TSOP32 (NZ)
8 x 14mm
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
LOW POWER CONSUMPTION
– Standby and Automatic Standby
Figure 1. Logic Diagram
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
VCC
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
A0-A18
19
8
DQ0-DQ7
®
ECOPACK
PACKAGES AVAILABLE
W
E
G
M29W040B
VSS
AI02953
September 2005
1/20
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