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M29F400BB90M1F

Description
256K X 16 FLASH 5V PROM, 45 ns, PDSO48
Categorystorage    storage   
File Size204KB,40 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M29F400BB90M1F Overview

256K X 16 FLASH 5V PROM, 45 ns, PDSO48

M29F400BB90M1F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instructionSOP, SOP44,.63
Contacts44
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G44
length28.2 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,7
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)245
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height2.62 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width13.3 mm
M29F400BT
M29F400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
single supply Flash memory
Feature summary
Single 5 V ± 10% supply voltage for program,
erase and read operations
Access time: 45 ns
Programming time
– 8 µs per Byte/Word typical
11 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
Program/erase controller
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase
algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 program/erase cycles per block
20-year data retention
– Defectivity below 1 ppm/year
TSOP48 (N)
12 x 20mm
44
1
SO44 (MT)
Electronic signature
– Manufacturer Code: 0020h
– Top Device Code M29F400BT: 00D5h
– Bottom Device Code M29F400BB: 00D6h
ECOPACK
®
packages available
December 2006
Rev 4
1/40
www.st.com
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