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3SK166A

Description
GaAs N-channel Dual Gate MES FET
CategoryDiscrete semiconductor    The transistor   
File Size38KB,5 Pages
ManufacturerSONY
Websitehttp://www.sony.co.jp
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3SK166A Overview

GaAs N-channel Dual Gate MES FET

3SK166A Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
Other featuresLOW NOISE
ConfigurationSINGLE
Maximum drain current (ID)0.08 A
FET technologyMETAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)18 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
3SK166A
GaAs N-channel Dual Gate MES FET
Description
The 3SK166A is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
Low voltage operation
Low noise: NF = 1.2dB (typ.) at 800MHz
High gain: Ga = 20dB (typ) at 800MHz
High stability
Application
UHF band amplifier, oscillator
Structure
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
Drain to source voltage
V
DSX
8
Gate 1 to source voltage
V
G1S
–6
Gate 2 to source voltage
V
G2S
–6
Drain current
I
D
80
Allowable power dissipation
P
D
150
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y11-PS

3SK166A Related Products

3SK166A 3SK166 3SK166A-2 3SK166A-0
Description GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
package instruction SMALL OUTLINE, R-PDSO-G4 , SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknow unknow unknow unknow
FET technology METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Base Number Matches 1 1 1 1
Contacts 4 - 4 4
Other features LOW NOISE - LOW NOISE LOW NOISE
Configuration SINGLE - SINGLE SINGLE
Maximum drain current (ID) 0.08 A - 0.08 A 0.08 A
Maximum feedback capacitance (Crss) 0.04 pF - 0.04 pF 0.04 pF
highest frequency band ULTRA HIGH FREQUENCY BAND - ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 - R-PDSO-G4 R-PDSO-G4
Number of components 1 - 1 1
Number of terminals 4 - 4 4
Operating mode DUAL GATE, DEPLETION MODE - DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Minimum power gain (Gp) 18 dB - 18 dB 18 dB
Certification status Not Qualified - Not Qualified Not Qualified
surface mount YES - YES YES
Terminal form GULL WING - GULL WING GULL WING
Terminal location DUAL - DUAL DUAL
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER
Transistor component materials GALLIUM ARSENIDE - GALLIUM ARSENIDE GALLIUM ARSENIDE
Is it Rohs certified? - incompatible incompatible incompatible
Maximum drain current (Abs) (ID) - 0.08 A 0.08 A 0.08 A
JESD-609 code - e0 e0 e0
Maximum operating temperature - 150 °C 150 °C 150 °C
Maximum power consumption environment - 0.15 W 0.15 W 0.15 W
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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