DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK176A
RF AMP. AND MIXER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• High Power Gain:
• Low Noise Figure:
G
PS
= 24 dB TYP. (f = 470 MHz)
NF = 2.0 dB TYP. (f = 470 MHz)
NF = 1.0 dB TYP. (f = 55 MHz)
• Automatically Mounting: Embossed Type Taping
• Suitable for use as RF amplifier and Mixer in CATV tuner.
• Small Package:
4 Pins Mini Mold
PACKAGE DIMENSIONS
(Unit: mm)
0.4
–0.05
0.4
–0.05
+0.1
0.16
–0.06
+0.2
2.8
–0.1
+0.2
1.5
–0.1
+0.1
2
2.9±0.2
(1.8)
0.85 0.95
3
4
5°
+0.1
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*
R
L
≥
10 kΩ
V
DSX
V
G1S
V
G2S
I
D
P
D
T
ch
T
stg
18
±8
(±10)*
±8
(±10)*
25
200
125
–55 to +125
V
V
V
mA
mW
°C
°C
0.6
–0.05
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
5°
1.1
–0.1
+0.2
0.8
5°
0 to 0.1
5°
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure 1
Noise Figure 2
SYMBOL
BV
DSX
I
DSX
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
| y
fs
|
C
iss
C
oss
C
rss
G
PS
NF1
NF2
21.0
22
2.2
1.3
25.5
2.7
1.6
0.015
24.0
2.0
1.0
3.5
2.5
3.2
1.9
0.03
MIN.
18
1.0
0
0
10
+1.0
+1.0
±20
±20
TYP.
MAX.
UNIT
V
mA
V
V
nA
nA
mS
pF
pF
pF
dB
dB
dB
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
TEST CONDITIONS
V
G1S
= V
G2S
= –2 V, I
D
= 10
µ
A
V
DS
= 5 V, V
G1S
= 0.75 V, V
G2S
= 4 V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
µ
A
V
DS
= 6 V, V
G1S
= 3 V, I
D
= 10
µ
A
V
DS
= 0, V
G2S
= 0, V
G1S
=
±10
V
V
DS
= 0, V
G1S
= 0, V
G2S
=
±10
V
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA
f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 MHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 470 MHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 55 MHz
I
DSX
Classification
Class
Marking
I
DSX
(mA)
U87/UHG*
U87
1.0 to 6.0
U88/UHH*
U88
4.0 to 10.0
*
Old Specification/New Specification
Document No. P10567EJ2V0DS00 (2nd edition)
(Previous No. TD-2263)
Date Published August 1995 P
Printed in Japan
+0.1
0.4
–0.05
+0.1
©
(1.9)
1995
1989
3SK176A
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
G1S
= 0.8 V
V
G2S
= 4 V
P
T
– Total Power Dissipation – mW
300
I
D
– Drain Current – mA
400
8
6
0.6 V
4
200
100
2
0.4 V
0.2 V
0
25
50
75
100
125
0
10
V
DS
– Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
20
T
A
– Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
DS
= 6 V
|y
fs
| – Forward Transfer Admittance – mS
20
40
V
DS
= 6 V
f = 1 kHz
30
3V
20
V
G2S
= 5 V
4V
I
D
– Drain Current – mA
5V
4V
10
3V
2V
V
G2S
= 1 V
10
2V
1V
0
1.0
V
G1S
– Gate 1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
V
DS
= 6 V
f = 1 MHz
4.0
2.0
0
1.0
V
G1S
– Gate 1 to Source Voltage – V
2.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
| – Forward Transfer Admittance – mS
40
3V
20
C
iss
– Input Capacitance – pF
V
DS
= 6 V
f = 1 kHz
3.0
I
D
= 10 mA at V
G2S
= 3 V
I
D
= 5 mA at V
G2S
= 3 V
2.0
V
G2S
= 2 V
1.0
0
–1.0
0
10
I
D
– Drain Current – mA
20
0
1.0
2.0
3.0
4.0
V
G2S
– Gate 2 to Source Voltage – V
2
3SK176A
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
10
V
DS
= 6 V
f = 1 MHz
20
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
G
PS
C
OSS
– Output Capacitance – pF
2.0
NF – Noise Figure – dB
G
PS
– Power Gain – dB
10
f = 470 MHz
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
I
D
= 10 mA at V
G2S
= 3 V
I
D
= 5 mA at V
G2S
= 3 V
1.0
5
0
–10
NF
–20
0
–1.0
0
1.0
2.0
3.0
4.0
0
–2.0
0
2.0
4.0
6.0
8.0
V
G2S
– Gate 2 to Source Voltage – V
V
G2S
– Gate 2 to Source Voltage – V
NF TEST CIRCUIT AT f = 55 MHz
V
G2S
V
DS
RFC
Ferrite
Beads 1 500 pF
2.2 kΩ
1 500 pF
1 000 pF
INPUT
3.3 kΩ
50
Ω
1 000 pF
27 pF
47 kΩ
47 kΩ
OUTPUT
27 pF
3.3 kΩ
50
Ω
V
G1S
3
Embedded System
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