3SK186
Silicon N-Channel Dual Gate MOS FET
Application
UHF TV tuner RF amplifier
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK186
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
±10
±10
35
150
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Symbol
V
(BR)DSX
V
(BR)G1SS
V
(BR) G2SS
I
G1SS
I
G2SS
Min
12
±10
±10
—
—
+0.5
+0.5
0
15
—
—
—
16
—
Typ
—
—
—
—
—
—
—
—
—
1.7
1.0
0.017
19
3.0
Max
—
—
—
±100
±100
–0.8
–0.8
4
—
2.2
1.4
0.03
—
4.5
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
V
DS
= 4 V, V
G2S
= 3V,
I
D
= 10 mA, f = 900 MHz
Test conditions
V
G1S
= V
G2S
= –5 V,
I
D
= 200
µA
I
G1
=
±10 µA,
V
G2S
= V
DS
= 0
I
G2
=
±10 µA,
V
G1S
= V
DS
= 0
V
G1S
=
±8
V, V
G2S
= V
DS
= 0
V
G2S
=
±8
V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 100
µA
V
DS
= 6 V, V
G1S
= 3V,
I
D
= 100
µA
V
DS
= 6 V, V
G2S
= 3V, V
G1S
= 0
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 kHz
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 MHz
Gate 1 to source cutoff voltage V
G1S(off)
Gate 2 to source cutoff voltage V
G2S(off)
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note: Marking is “FI–”.
I
DSS
|y
fs
|
Ciss
Coss
Crss
PG
NF
2
3SK186
Maximum Channel Power
Dissipation Curve
Channel Power Dissipation P
ch
(mW)
300
Typical Output Characteristics
20
1.6
1.4
1.2
=1
P
ch
50
mW
Drain Current I
D
(mA)
16
1.0
200
12
V
G2S
= 3 V
0.8
0.6
8
100
4
0.4
0.2
V
G1S
= 0 V
0
50
100
150
Ambient Temperature Ta (°C)
0
2
6
10
4
8
Drain to Source Voltage V
DS
(V)
Drain Current vs. Gate 1
to Source Voltage
20
V
DS
= 4 V
3
2
2.5
1.5
Drain Current I
D
(mA)
20
Drain Current vs. Gate 2
to Source Voltage
1.75
V
DS
= 4 V
1.0
12
0.75
8
0.5
4
0.25
V
G1S
= 0
1.5
1.25
Drain Current I
D
(mA)
16
16
12
1.0
8
V
G2S
= 0.5 V
4
0
–0.8
0
0.8
1.6
2.4
3.2
Gate 1 to Source Voltage V
G1S
(V)
0
0.8
2.4
4.0
1.6
3.2
Gate 2 to Source Voltage V
G2S
(V)
3
3SK186
Forward Transfer Admittance vs.
Gate 1 to Source Voltage
Forward Transfer Admittance
y
fs
(mS)
20
V
DS
= 6 V
3
2.5
2.0
Power Gain PG (dB)
20
Power Gain vs. Drain Current
16
16
12
1.5
8
1.0
4
V
G2S
= 0.5 V
12
8
V
DS
= 4 V
V
G2S
= 3 V
f = 900 MHz
4
0
–0.4
0.4
1.2
0
0.8
1.6
Gate 1 to Source Voltage V
G1S
(V)
0
2
4
6
8
Drain Current I
D
(mA)
10
Noise Figure vs. Drain Current
10
V
DS
= 4 V
V
G2S
= 3 V
f = 900 MHz
Noise Figure NF (dB)
8
6
4
2
0
2
6
4
8
Drain Current I
D
(mA)
10
4
Unit: mm
2.95
±
0.2
1.9
±
0.2
0.95 0.95
0.1
0.4
+ 0.05
–
0.1
0.4
+ 0.05
–
0.65
0.16
– 0.06
+ 0.1
1.5
±
0.15
+ 0.2
– 0.6
0 – 0.1
0.95
0.85
1.8
±
0.2
0.3
1.1
– 0.1
+ 0.2
0.65
0.4
– 0.05
+ 0.1
0.1
0.6
+ 0.05
–
2.8
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
—
Conforms
0.013 g
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