DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK223
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 101 dB
µ
TYP. @ f = 470 MHz, G
R
= –30 dB
• Low Noise Figure:
• High Power Gain:
• Enhancement Type.
2.9±0.2
(1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8
–0.3
+0.2
+0.2
+0.2
0.4
–0.3
NF2 = 0.9 dB TYP. (f = 55 MHz)
G
PS
= 20 dB TYP. (f = 470 MHz)
0.85 0.95
1.5
–0.3
2
3
0.4
–0.3
0.4
–0.3
0.16
–0.3
+0.2
+0.2
NF1 = 2.2 dB TYP. (f = 470 MHz)
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting:
• Small Package:
Embossed Type Taping
4 Pins Mini Mold
1
+0.2
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
≥
10 kΩ
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
(±10)
*1
±8
(±10)
*1
18
18
25
200
125
–55 to +125
V
V
V
V
mA
mW
°C
°C
1.1
0.8
0.6
–0.3
5°
5°
V
+0.2
–0.3
5°
0 to 0.1
5°
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10575EJ2V0DS00 (2nd edition)
(Previous No. TD-2268)
Date Published August 1995 P
Printed in Japan
+0.2
(1.9)
©
1989
1993
3SK223
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain to Source Breakdown
Voltage
Drain Current
Gate1 to Source Cutoff
Voltage
Gate2 to Source Cutoff
Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer
Admittance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Power Gain
Noise Figure 1
Noise Figure 2
SYMBOL
BV
DSX
MIN.
18
TYP.
MAX.
UNIT
V
TEST CONDITIONS
V
G1S
= V
G2S
= –2 V, I
D
= 10
µ
A
V
DS
= 5 V, V
G2S
= 4 V, V
G1S
= 0.75 V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
µ
A
V
DS
= 6 V, V
G1S
= 3 V, I
D
= 10
µ
A
V
DS
= 0, V
G2S
= 0, V
G1S
=
±8
V
V
DS
= 0, V
G1S
= 0, V
G2S
=
±8
V
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 10 mA
f = 1 kHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 1 MHz
I
DSX
V
G1S(off)
0.01
0
8.0
+1.0
mA
V
V
G2S(off)
0
+1.0
±20
±20
V
I
G1SS
I
G2SS
|y
fs
|
15
19.5
nA
nA
mS
C
iss
C
DSS
C
rss
2.5
0.9
3.0
1.2
0.015
3.5
1.5
0.03
pF
pF
pF
G
PS
NF1
NF2
17.0
20.0
2.2
0.9
3.2
2.4
dB
dB
dB
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 470 MHz
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10 mA
f = 55 MHz
I
DSX
Classification
Class
Marking
I
DSX
(mA)
U90/UIO*
U90
0.01 to 3.0
U91/UIA*
U91
1.0 to 8.0
*
Old Specification/New Specification
2
3SK223
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
– Total Power Dissipation – mW
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
I
D
– Drain Current – mA
25
20
15
10
5
0
3
6
9
12
300
200
100
V
G2S
= 3 V
V
G1S
= 1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
0.8 V
0.6 V
15
V
DS
– Drain to Source Voltage – V
0
25
50
75
100
125
T
A
– Ambient Temperature – °C
I
D
– Drain Current – mA
25
20
15
10
V
DS
= 6 V
V
G2S
= 3.5 V
3.0 V
2.5 V
2.0 V
1.5 V
|y
fs
| – Forward Transfer Admittance – mS
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
32
24
16
8
0.5 V
1.0 V
1.5 V
2.5 V
2.0 V
3.0 V
V
DS
= 6 V
f = 1 kHz
V
G2S
= 3.5 V
5
1.0 V
0
0.5
1.0
1.5
2.0
2.5
V
G1S
– Gate1 to Source Voltage – V
0
0.5
1.0
1.5
2.0
2.5
V
G1S
– Gate1 to Source Voltage – V
|y
fs
| – Forward Transfer Admittance – mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
32
24
16
8
1.0 V
0
4
2.0 V
1.5 V
8
12
V
G2S
= 3.5 V
3.0 V
2.5 V
16
20
V
DS
= 6 V
f = 1 kHz
C
iss
– Input Capacitance – pF
5.0
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
f = 1 MHz
4.0
3.0
2.0
1.0
I
D
– Drain Current – mA
0
–1.0
0
1.0
2.0
3.0
4.0
V
G2S
– Gate2 to Source Voltage – V
3
3SK223
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
C
DSS
– Output Capacitance – pF
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 3 V)
f = 1 MHz
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
10
f = 470 MHz
I
D
mA
20
(at=V10 = 6 V
DS
V
G2S
= 3 V)
G
PS
NF – Noise Figure – dB
G
PS
– Power Gain – dB
2.0
10
1.5
5
0
1.0
–10
NF
–20
0.5
0
–1.0
0
1.0
2.0
3.0
4.0
0
–2.0
0
2.0
4.0
6.0
8.0
V
G2S
– Gate2 to Source Voltage – V
V
G2S
– Gate2 to Source Voltage – V
4
3SK223
G
PS
AND NF TEST CIRCUIT AT f = 470 MHz
V
G2S
1 000 pF
22 kΩ
1 000 pF
Ferrite Beads
INPUT 40 pF
50
Ω
1 000 pF
22 kΩ
L
1
15 pF
15 pF
L
2
40 pF OUTPUT
50
Ω
1 000 pF
L
3
1 000 pF
1 000 pF
V
G1S
V
DS
L
1
:
φ
1.2 mm U.E.W
φ
5 mm 1T
L
2
:
φ
1.2 mm U.E.W
φ
5 mm 1T
L
3
: REC 2.2
µ
H
NF TEST CIRCUIT AT f = 55 MHz
V
G2S
V
DS
RFC
2.2 kΩ
Ferrite
Beads
1 500 pF
1 500 pF
1 000 pF
INPUT
3.3 kΩ
50
Ω
27 pF
47 kΩ
1 000 pF
OUTPUT
47 kΩ
27 pF
3.3 kΩ
50
Ω
V
G1S
5
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