DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK252
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low V
DD
Use
• Driving Battery
0.4
+ 0.1
– 0.05
:
(V
DS
= 3.5 V)
NF1 = 2.0 dB TYP. (f = 470 MHz)
NF2 = 0.8 dB TYP. (f = 55 MHz)
G
PS
= 19.0 dB TYP. (f = 470 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
2.8
+ 0.2
– 0.3
1.5
+ 0.2
– 0.1
2
3
0.4
+ 0.1
– 0.05
4
5˚
0.4
+ 0.1
– 0.05
5˚
• Low Noise Figure :
• High Power Gain :
• Suitable for use as RF amplifier in CATV tuner.
2.9 ± 0.2
(1.8)
0.95
• Automatically Mounting :
• Package
:
Embossed Type Taping
4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1:
R
L
≥
10 kΩ
*2:
Free air
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
*1
±8
*1
18
18
25
200
*2
125
–55 to +125
V
V
V
V
V
mA
mW
°C
°C
0.85
0.6
+ 0.1
– 0.05
1
5˚
1.1
+ 0.2
– 0.1
0.8
5˚
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10582EJ2V0DS00 (2nd edition)
(Previous No. TD-2373)
Date Published August 1995 P
Printed in Japan
0~0.1
©
0.16
+ 0.1
– 0.05
(1.9)
1993
3SK252
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure 1
Noise Figure 2
SYMBOL
BV
DSX
I
DSX
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
|y
fs
|
C
iss
C
oss
C
rss
G
ps
NF1
NF2
16
14
2.4
0.9
18
2.9
1.2
0.01
19
2.0
0.8
MIN.
18
0.1
–1.0
0
0
0.5
5.0
+1.0
1.0
±20
±20
23
3.4
1.5
0.03
22
3.0
2.3
TYP.
MAX.
UNIT
V
mA
V
V
nA
nA
mS
pF
pF
pF
dB
dB
dB
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 470 MHz
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 55 MHz
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 1 MHz
TEST CONDITIONS
V
G1S
= V
G2S
= –2 V, I
D
= 10
µ
A
V
DS
= 3.5 V, V
G2S
= 3 V, V
G1S
= 0.75 V
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 10
µ
A
V
DS
= 3.5 V, V
G1S
= 3 V, I
D
= 10
µ
A
V
DS
= 0, V
G2S
= 0, V
G1S
=
±6
V
V
DS
= 0, V
G1S
= 0, V
G2S
=
±6
V
V
DS
= 3.5 V, V
G2S
= 3 V, I
D
= 7 mA
f = 1 kHz
I
DSX
Classification
Rank
Marking
I
DSX
(mA)
U1E/UAE*
U1E
0.1 to 5.0
*
Old Specification / New Specification
2
3SK252
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
25
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
G2S
= 3 V
V
G1S
= 1.6 V
300
P
D
– Total Power Dissipation – mW
I
D
– Drain Current – mA
20
1.4 V
15
1.2 V
1.0 V
0.8 V
5
0.6 V
200
10
100
0
25
50
75
100
125
0
5
V
DS
– Drain to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
10
T
A
– Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
V
DS
= 3.5 V
V
G2S
= 3.5 V
3.0 V
2.5 V
2.0 V
15
|y
fs
| – Forward Transfer Admittance – mS
25
40
V
DS
= 3.5 V
f = 1 kHz
32
V
G2S
= 3.5 V
I
D
– Drain Current – mA
20
24
10
1.5 V
16
2.0 V
8
1.0 V
0
0.5
1.0
1.5 V
1.5
3.0 V
2.5 V
5
1.0 V
0.5
1.0
1.5
2.0
2.5
0
2.0
2.5
V
G1S
– Gate1 to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G1S
– Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
I
D
= 7 mA
(at V
DS
= 3.5 V,
V
G2S
= 3 V)
f = 1 MHz
|y
fs
| – Forward Transfer Admittance – mS
40
C
iss
– Input Capacitance – pF
V
DS
= 3.5 V
f = 1 kHz
32
V
G2S
= 3.5 V
3.0 V
16
2.5 V
4.0
24
3.0
2.0
8
1.0 V
0
4
1.5 V
8
12
2.0 V
16
20
1.0
0
–1.0
0
1.0
2.0
3.0
4.0
I
D
– Drain Current – mA
V
G2S
– Gate2 to Source Voltage – V
3
3SK252
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
10
I
D
= 7 mA
(at V
DS
= 3.5 V,
V
G2S
= 3.0 V)
f = 1 MHz
20
I
D
= 7 mA
(at V
DS
= 3.5 V,
V
G2S
= 3.0 V)
f = 470 MHz
G
PS
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
C
oss
– Output Capacitance – pF
NF – Noise Figure – dB
G
PS
– Power Gain – dB
2.0
10
1.5
5
0
1.0
–10
NF
–20
0.5
0
–1.0
0
1.0
2.0
3.0
4.0
0
–1.0
0
1.0
2.0
3.0
4.0
V
G2S
– Gate2 to Source Voltage – V
V
G2S
– Gate2 to Source Voltage – V
4
3SK252
G
PS
AND NF TEST CIRCUIT AT f = 470 MHz
V
G2S
1 000 pF
22 kΩ
1 000 pF
Ferrite Beads
INPUT 40 pF
50
Ω
1 000 pF
22 kΩ
L
3
1 000 pF
1 000 pF
L
1
:
φ
1.2 mm U.E.W
φ
5 mm 1T
L
2
:
φ
1.2 mm U.E.W
φ
5 mm 1T
L
3
: REC 2.2
µ
H
L
1
15 pF
15 pF
1 000 pF
L
2
40 pF
OUTPUT
50
Ω
V
G1S
V
DS
NF TEST CIRCUIT AT f = 55 MHz
V
G2S
V
DS
RFC
2.2 kΩ
1 500 pF
1 000 pF
INPUT
50
Ω
27 pF
3.3
kΩ
47 kΩ
47 kΩ
1 000 pF
27 pF
OUTPUT
3.3 kΩ
50
Ω
Ferrite Beads
1 500 pF
V
G1S
5
京公网安备 11010802033920号
EEWORLD
