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3SK254

Description
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
File Size37KB,6 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet View All

3SK254 Overview

RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK254
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Low V
DD
Use
• Driving Battery
:
(V
DS
= 3.5 V)
NF1 = 2.0 dB TYP. (f = 470 MHz)
NF2 = 0.8 dB TYP. (f = 55 MHz)
• High Power Gain :
G
PS
= 19.0 dB TYP. (f = 470 MHz)
Embossed Type Taping
4 Pins Super Mini Mold
• Suitable for use as RF amplifier in CATV tuner.
2.0±0.2
1.25
PACKAGE DIMENSIONS
(Unit: mm)
2.1±0.2
0.3
+0.1
–0.05
0.3
+0.1
–0.05
3
4
• Low Noise Figure :
1.25±0.1
2
• Automatically Mounting :
• Small Package
:
0.65
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1:
R
L
10 kΩ
*2:
Free air
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
*1
±8
*1
18
18
25
130
*2
125
–55 to +125
V
V
V
V
V
mA
mW
°C
°C
0.9±0.1
0.60
0.4
+0.1
–0.05
1
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10585EJ2V0DS00 (2nd edition)
(Previous No. TD-2307)
Date Published August 1995 P
Printed in Japan
0 to 0.1
©
0.15
+0.1
–0.05
0.3
+0.1
–0.05
0.3
(1.3)
1993
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