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3SK255

Description
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
File Size37KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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3SK255 Overview

RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK255
RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Low V
DD
Use
• Driving Battery
• Low Noise Figure :
• High Power Gain :
NF = 1.8 dB TYP. (f = 900 MHz)
G
PS
= 18.0 dB TYP. (f = 900 MHz)
Embossed Type Taping
1.25
PACKAGE DIMENSIONS
:
(V
DS
= 3.5 V)
0.3
+0.1
–0.05
(Unit: mm)
2.1±0.2
1.25±0.1
2
3
0.3
+0.1
–0.05
4
• Suitable for uses as RF amplifier in UHF TV tuner.
• Small Package
:
4 Pins Super Mini Mold
2.0±0.2
0.65
• Automatically Mounting :
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1:
R
L
10 kΩ
*2:
Free air
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
*1
±8
*1
18
18
25
130
125
–55 to +125
V
V
V
V
mA
mW
°C
°C
0.60
0.4
+0.1
–0.05
1
0.9±0.1
0.3
V
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10586EJ3V0DS00 (3rd edition)
Date Published June 1996 P
Printed in Japan
0 to 0.1
©
0.15
+0.1
–0.05
0.3
+0.1
–0.05
(1.3)
1993
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