3SK298
Silicon N-Channel Dual Gate MOS FET
ADE-208-390
1st. Edition
Application
UHF / VHF RF amplifier
Features
•
Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
•
Capable of low voltage operation
Outline
CMPAK–4
2
3
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
3SK298
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
12
±8
±8
25
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
3SK298
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Symbol
V
(BR)DSX
V
(BR)G1SS
V
(BR) G2SS
I
G1SS
I
G2SS
I
DS(on)
Min
12
±8
±8
—
—
0.5
0
0
16
2.4
0.8
—
22
—
12
—
—
Typ
—
—
—
—
—
—
—
—
20
2.9
1.0
0.023
25
1.0
15
3.2
2.8
Max
—
—
—
±100
±100
10
+1.0
+1.0
—
3.4
1.4
0.04
—
1.8
—
4.5
3.5
Unit
V
V
V
nA
nA
mA
V
V
mS
pF
pF
pF
dB
dB
dB
dB
dB
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 60 MHz
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 900 MHz
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 200 MHz
Test conditions
I
D
= 200
µA
, V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
=
±10 µA,
V
G2S
= V
DS
= 0
I
G2
=
±10 µA,
V
G1S
= V
DS
= 0
V
G1S
=
±6
V, V
G2S
= V
DS
= 0
V
G2S
=
±6
V, V
G1S
= V
DS
= 0
V
DS
= 6 V, V
G1S
= 0.75V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3V,
I
D
= 100
µA
V
DS
= 10 V, V
G1S
= 3V,
I
D
= 100
µA
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 kHz
V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 MHz
Gate 1 to source cutoff voltage V
G1S(off)
Gate 2 to source cutoff voltage V
G2S(off)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
Note: Marking is “ZP–”
|y
fs
|
Ciss
Coss
Crss
PG
NF
PG
NF
NF
3
3SK298
Maximum Channel Power
Dissipation Curve
Pch (mW)
200
20
Typical Output Characteristics
V
G2S
= 3 V
I
D
(mA)
16
1.4 V
Pulse test
1.2 V
150
Channel Power Dissipation
12
1.0 V
100
Drain current
8
0.8 V
0.6 V
V
G1S
= 0.4 V
50
4
0
50
100
150
200
Ambient Temperature Ta (°C)
0
2
4
6
8
10
Drain to source voltage V
DS
(V)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
I
D
(mA)
16
2.5 V
2.0 V
1.5 V
V
DS
= 6 V
Pulse test
Drain Current vs. Gate2 to Source Voltage
20
3.0 V
Drain current I
D
(mA)
16
2.0 V
2.5 V
1.5 V
1.0 V
V
DS
= 6 V
Pulse test
12
1.0 V
12
Drain current
8
8
4
V
G2S
= 0.5 V
0
1
2
3
4
5
4
V
G1S
= 0.5 V
1
2
3
4
5
0
Gate1 to source voltage
V
G1S
(V)
Gate2 to source voltage V
G2S
(V)
4
3SK298
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Forward transfer admittance
|y
fs
| (mS)
30
V
DS
= 6 V
f = 1 kHz
V
G2S
= 3.0 V
2.5 V
2.0 V
1.5 V
6
1.0 V
0.5 V
0
0.4
0.8
1.2
1.6
2.0
Power gain
30
PG (dB)
Power Gain vs. Drain Current
24
24
18
18
12
12
V
DS
= 6 V
V
G2S
= 3 V
f = 200 MHz
2
Drain current
5
10
I
D
(mA)
20
6
0
1
Gate1 to source voltage V
G1S
(V)
Noise Figure vs. Drain Current
3.0
NF (dB)
V
DS
= 6 V
V
G2S
= 3 V
f = 200 MHz
30
PG (dB)
Power gain
Power Gain vs. Drain to Source Voltage
2.4
24
Noise figure
1.8
18
1.2
12
V
G2S
= 3 V
I
D
= 10 mA
f = 200 MHz
2
4
6
8
V
DS
10
(V)
0.6
0
1
6
2
5
10
I
D
(mA)
20
0
Drain current
Drain to source voltage
5
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