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3SK317

Description
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size36KB,8 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

3SK317 Overview

Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK317 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage14 V
Maximum drain current (Abs) (ID)0.025 A
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.04 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
Minimum power gain (Gp)24 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
3SK317
Silicon N-Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
ADE-208-778 (Z)
1st. Edition
Mar. 1999
Features
Low noise characteristics;
(NF = 1.0 dB typ. at f = 200 MHz)
High power gain characteristics ;
(PG = 27.6 dB typ. at f = 200 MHz)
Outline
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note: Marking is “ZR-”.
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