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3SK320

Description
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
CategoryDiscrete semiconductor    The transistor   
File Size516KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3SK320 Overview

N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)

3SK320 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction2-2K1B, 4 PIN
Contacts4
Reach Compliance Codeunknow
Other featuresLOW NOISE
ConfigurationSINGLE
FET technologyMETAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)12 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
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