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M28W640ECB10N6E

Description
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
Categorystorage    storage   
File Size425KB,55 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M28W640ECB10N6E Overview

4M X 16 FLASH 3V PROM, 70 ns, PBGA48

M28W640ECB10N6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Is SamacsysN
Maximum access time100 ns
Other featuresBOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
JESD-609 codee3/e6
length18.4 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,127
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8/3.3,3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size4K,32K
Maximum standby current0.000005 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN/TIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width12 mm
Base Number Matches1
M28W640ECT
M28W640ECB
64 Mbit (4Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
DD
= 2.7V to 3.6V Core Power Supply
– V
DDQ
= 1.65V to 3.6V for Input/Output
– V
PP
= 12V for fast Program (optional)
s
s
Figure 1. Packages
FBGA
ACCESS TIME: 70, 85, 90,100ns
PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option
TFBGA48 (ZB)
6.39 x 10.5mm
s
s
COMMON FLASH INTERFACE
MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
s
BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down
TSOP48 (N)
12 x 20mm
s
SECURITY
– 128 bit user Programmable OTP cells
– 64 bit unique device identifier
s
s
s
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W640ECT: 8848h
– Bottom Device Code, M28W640ECB: 8849h
s
April 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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