BD175/177/179
BD175/177/179
Medium Power Linear and Switching
Applications
• Complement to BD 176/178/180 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
*Collector-Base Voltage
Parameter
: BD175
: BD177
: BD179
: BD175
: BD177
: BD179
Value
45
60
80
45
60
80
5
3
7
30
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD175
: BD177
: BD179
Collector Cut-off Current
: BD175
: BD177
: BD179
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
100
100
100
1
40
15
250
0.8
1.3
3
V
V
MHz
Typ.
Max.
Units
V
V
V
µA
µA
µA
mA
I
CBO
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 1A
I
C
= 1A, I
B
= 0.1A
V
CE
= 2V, I
C
= 1A
V
CE
= 10V, I
C
= 250mA
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
h
FE
Classificntion
Classification
h
FE1
* Classification 16: Only BD175
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD175/177/179
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 2V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
1
V
BE
(sat)
V
CE
(sat)
0.1
10
1
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
40
I
C
MAX. (Pulsed)
10
µ
s
35
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (Continuous)
1m
DC
P
C
[W], POWER DISSIPATION
0
10
µ
s
30
s
25
1
20
15
10
BD175
BD177
BD179
5
0.1
1
10
0
100
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 3. Safe Operating Area
Figure 4. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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No Identification Needed
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©2000 Fairchild Semiconductor International
Rev. E
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