Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD176 BD178 BD180
DESCRIPTION
With TO-126 package
・Complement
to type BD175 /177 /179
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
固电
导½
半
PARAMETER
CONDITIONS
BD176
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter -base voltage
Collector current (DC)
ES
NG
BD178
BD180
BD176
BD178
BD180
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
-45
-60
-80
-45
-60
-80
UNIT
V
Collector-emitter voltage
Open base
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Open collector
-5
-3
-7
V
A
A
W
℃
℃
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
30
150
-65~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BE
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
BD176
V
CEO(SUS)
Collector-emitter
sustaining voltage
BD178
BD180
BD176
I
CBO
Collector cut-off current
BD178
BD180
V
CB
=-45V; I
E
=0
V
CB
=-60V; I
E
=0
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-150mA ; V
CE
=-2V
I
C
=-0.1A; I
B
=0
CONDITIONS
I
C
=-1A; I
B
=-0.1A
I
C
=-1A ; V
CE
=-2V
BD176 BD178 BD180
MIN
TYP.
MAX
-0.8
-1.3
UNIT
V
V
-45
-60
-80
V
-100
μA
I
EBO
h
FE-1
h
FE-2
f
T
电半
固
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
导½
h
FE-1
Classifications
6
40-100
10
HA
INC
63-160
ES
NG
16
100-250
I
C
=-1A ; V
CE
=-2V
I
C
=-250mA; V
CE
=-10V
MIC
E
OR
UCT
ND
O
-1
40
250
15
3
mA
MHz
※
classification 16 :only BD176
2
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