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BD179-6

Description
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size45KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
Download Datasheet Parametric View All

BD179-6 Overview

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD179-6 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.3
EPITAXIAL SILICON POWER TRANSISTORS
BD175
BD177
BD179
NPN
BD176
BD178
BD180
PNP
EC
TO126
Plastic Package
B
Intended for use in Medium Power Linear Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Power Dissipation @ T
a
=25ºC
Derate above 25ºC
Power Dissipation @ T
c
=25ºC
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
D
P
D
T
j
, T
stg
BD175
BD176
45
45
BD177
BD178
60
60
5.0
3.0
7.0
1.25
10
30
- 65 to +150
BD179
BD180
80
80
UNIT
V
V
V
A
A
W
mW/ºC
W
ºC
R
th (j-a)
R
th (j-c)
100
4.16
MIN
BD175/76
BD177/78
BD179/80
BD175/76
BD177/78
BD179/80
45
60
80
0.8
1.3
40
15
-6
- 10
- 16
40
63
100
3.0
100
160
250
MAX
100
100
100
1.0
ºC/W
ºC/W
UNIT
µA
µA
µA
mA
V
V
V
V
V
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
CBO
V
CB
=45V
,
I
E
=0
Collector Cut off Current
V
CB
=60V
,
I
E
=0
V
CB
=80V
,
I
E
=0
I
EBO
V
EB
=5V, I
C
=0
Emitter Cut off Current
I
C
=100mA, I
B
=0
*V
CEO (sus)
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
*V
CE (sat)
*V
BE (on)
*h
FE
*h
FE
Group
I
C
=1A, I
B
=0.1A
I
C
=1A, V
CE
=2V
I
C
=150mA, V
CE
=2V
I
C
=1A, V
CE
=2V
I
C
=150mA, V
CE
=2V
Only BD175/76/79
Transition Frequency
f
T
I
C
=250mA, V
CE
=10V
ΜΗz
*Pulse test:- Pulse width=300µs, Duty cycle=1.5%
µ
Continental Device India Limited
Data Sheet
Page 1 of 3

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