68AL60R4D datasheet, PDF - EEWORLD Datasheet

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68AL60R4D: DescriptionRESISTOR, THIN FILM, 0.1W, 0.5%, 50ppm, 60.4ohm, SURFACE MOUNT, 0202, CHIP; CategoryPassive components The resistor; File Size86KB，2 Pages; ManufacturerSpectrum Microwave

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68AL60R4D Overview

RESISTOR, THIN FILM, 0.1W, 0.5%, 50ppm, 60.4ohm, SURFACE MOUNT, 0202, CHIP

68AL60R4D Parametric

Parameter Name	Attribute value
package instruction	CHIP
Reach Compliance Code	unknown
ECCN code	EAR99
Manufacturer's serial number	68
Installation features	SURFACE MOUNT
Number of terminals	2
Maximum operating temperature	150 °C
Package shape	RECTANGULAR PACKAGE
method of packing	TRAY
Rated power dissipation(P)	0.1 W
Rated temperature	70 °C
resistance	60.4 Ω
Resistor type	FIXED RESISTOR
size code	0202
surface mount	YES
technology	THIN FILM
Temperature Coefficient	50 ppm/°C
Terminal shape	ONE SURFACE
Tolerance	0.5%
Operating Voltage	100 V
Base Number Matches	1

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HIN

ILM

HIP

ESISTORS

68 Series 0.020”x0.020”

Satcon Electronics 68 series .020” x .020” Thin-film Chip Resistors are available in both top-contact

and back-contact versions in a wide range of resistances and tolerances. Values are available from

1 ohm to 500 Kohms. Both passivated nichrome and tantalum-nitride resistor versions are available.

Nichrome provides excellent stability and temperature coefficient in hermetic applications while

tantalum-nitride provides superior moisture-resistance for non-hermetic applications.

Electrical Specifications

Parameter

Power Rating

Life

Noise

High Temp Exposure

TCR (68AL, 68BCN)

TCR (68ALT, 68BCR)

Operating voltage

Moisture resistance

Thermal shock

Limit

100 mW

+/-0.2% max

-35 dB typ

+/-0.2% max

+/-50 ppm/C

-50 to -120 ppm/C

100 VDC max

+/-0.5% max

Test conditions

(derated at 70 deg. to 0 mW @ 150 deg.)

1000 hours @ 125 degrees C

MIL-STD-202 method 308

100 hours at 150 degrees C

-55 to 125 degrees C

MIL-STD-202 method 106

MIL-STD-202 method 107

TypicalConfigurations

Values below 20 oh ms

Values from 20 to 200 ohms

Values above 200 ohms

Mechanical Specifications

Substrate

Bond pad metalization

Size

Thickness

Bond pad dimensions

Protective overcoat (passivation)

Back side

Silicon with 1 micron thermal oxide

Gold, 100 microinches

0.021 x .021 +/-.002 (0.53 x 0.53 mm +/- .05mm)

0.013 +/-.003 (0.33 +/-0.07 mm)

0.004 x .004 minimum (0.1 x 0.1 mm)

0.6 microns SiO2 (68AL & 68BCN versions only)

Lapped silicon (68AL, 68ALT), Gold (68BCN, 68BCR)

SatCon Electronics Inc.

Tel: 508-485-6350 Fax : 508-485-5168

165 Cedar Hill Street, Marlborough, Ma 01752

www.satconelectronics.com

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