MMA-022028-S7
2 - 20 GHz GaAs MMIC
Medium Power Amplifier
New Product Data Sheet
March 2007
Features:
•
•
•
•
•
•
•
Frequency Range: 2 - 20 GHz
P1dB: 28 dBm
Psat: 29 dBm
Gain: 8.0 dB
Advanced 0.25 um AlGaAs / InGaAs PHEMT
Technology with Excellent Reliability
Surface Mount Package: 7.9 X 8.5 X 2.7 mm
(Hermitical Version Available)
MTTF > 100 years @ 85°C ambient temperature
Description:
The MMA-022028-S7 is a 2-20 GHz wideband distributed MMIC amplifier fabricated with advanced 0.25um AlGaAs /
InGaAs PHEMT technology with Excellent Reliability. Small signal gain is typically 8.0 dB across the band. Input / output
return loss is typically better than 10 dB. It provides more than 28 dBm power at P1dB compression point and 29 dBm of
saturated power across the band. This wide band MMIC power amplifier can be used in various broadband military EW,
and communication applications, as well as well as commercial wireless applications. Hi-Rel and space screening
services are available ( Contact factory for details).
Electrical Specifications:
Parameter
Frequency Range (Min/Max)
Small Signal Gain
Gain Flatness
Input Return Loss
Output Return Loss
Output P1dB
Output Saturation Power
Noise Figure
Operating Current Range (Min/Max)
Thermal Resistance
(Vds = 8.0V, Vgs = -0.65V, Ids=380mA, Zo=50 ohm, T
A
=25
°C
)
Units
GHz
dB
+/-dB
dB
dB
dBm
dBm
dB
mA
°C/W
Min.
2
6.0
Typ.
8.0
1.0
-10
-10
+28.0
+29.0
4.5
380
20
Max.
20
+26.0
300
500
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2009
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Page 1 of 4
MMA-022028-S7
2 - 20 GHz GaAs MMIC
Medium Power Amplifier
New Product Data Sheet
March 2007
Typical RF Performance:
(Vds = 8.0V, Ids=380mA, T
A
=25
°C,
50 Ohm system unless stated otherwise)
MMA-022028-S7 Power
30
MMA-022028-S7
MMA-022028-S7 Gain (dB)
10
Gain (dB)
8
Gain (dB)
6
4
2
0
29
P-1(dBm)
28
27
26
25
1
3
5
7
9
11
13
15
17
19
Frequency(GHz)
0
5
10
Frequency (GHz)
15
20
MMA-022028-S7 Return Loss
0
Return Loss(dB)
RL in(dB)
RL out(dB)
MMA-022028 S7 Noise Figure
7
6
5
NF(dB)
4
3
2
1
0
0
5
MMA-022028 S7
package
-5
-10
-15
-20
0
5
10
Frequency(GHz)
15
20
10
15
F re que ncy (G Hz)
20
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2009
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Page 2 of 4
MMA-022028-S7
2 - 20 GHz GaAs MMIC
Medium Power Amplifier
New Product Data Sheet
March 2007
S-parameters:
(Vds = 8.0V, Ids=380mA, T
A
=25
°C,
50 Ohm system)
Freq(GHz) S11(dB) S11(ang) S21(dB) S21(ang) S12(dB) S12(ang) S22(dB) S22(ang)
1 -4.907
38.39 2.389
157.3 -48.68
156.8 -2.258
86.13
2 -18.31
-101.3 6.338
27.01 -37.48
20.92
-3.92 -54.82
3 -17.07
-138.8 7.723
-92.5 -32.14
-134.2 -6.191 -174.4
4 -13.54
88.34 7.905
153.3 -29.33
113.7 -8.622
73.67
5
-12
-43.55 7.787
45.04 -29.36
5.259 -9.724 -34.98
6 -12.07
-179.7 7.237 -59.74 -29.05
-91.21 -11.05 -136.8
7 -16.97
-10.66 6.898 -157.6 -29.67
143.8 -9.501
117.4
8 -20.36
-165.5 7.792
93.02 -29.47
58.48 -10.32
22.92
9 -15.09
40.92 7.901 -14.35 -28.57
-36.55 -12.18 -85.94
10 -12.73
-87.94 7.558 -118.3 -27.06
-147.9
-15
163.9
11 -12.48
139.9 7.572
134
-26.8
101.2 -15.71
67.62
12 -15.94
7.335
7.14
29.53 -27.13
-7.511 -15.95
-32
13 -29.17
-165.9 7.625 -77.91 -26.01
-110.5 -20.74 -132.8
14
-25.2
-66.16 7.432
171.4 -24.77
139.3 -24.62
109.2
15 -20.82
122.9 7.268
61.89 -25.33
27.97 -26.06
-28.7
16 -21.03
-26.04 7.168 -49.41 -24.08
-77.23
-27.9 -107.1
17 -26.45
-138.2 7.099 -162.7 -23.79
168.7 -25.97 -91.08
18 -26.94
-163.9 7.012
80.64 -23.93
53.6 -26.72
-165
19 -16.74
58.34 6.705 -39.07 -24.23
-65.38 -25.43
166.4
20 -15.04
-73.99 6.087 -163.2 -24.51
171.3 -18.84
57.46
Absolute Maximum Ratings
(*):
SYMBOL
PARAMETER
UNITS
ABSOLUTE MAXIMUM
Vds
Vgs
Ids
Igs
Pdiss
Pin max
Tch
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
DC Power Dissipation
RF Input Power
Channel Temperature
V
V
mA
mA
W
dBm
ºC
9.0
-2.0 to +0.8
600
3.0
5.0
+25
175
Tstg
Storage Temperature
ºC
-60 to 150
(*)
Operation of this device above any one of these parameters may cause permanent damage.
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2009
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Page 3 of 4
MMA-022028-S7
2 - 20 GHz GaAs MMIC
Medium Power Amplifier
New Product Data Sheet
March 2007
Mechanical Diagram:
Package Size: 7.9 X 8.5 X 2.7 mm
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-952-4000
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2009
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Page 4 of 4
京公网安备 11010802033920号
EEWORLD
