SFT14G ........ SFT18G
1.0 Amp. Glass Passivated Ultrafast Rectifiers
Pb
DO-41 Mini
Voltage
200 V to 600 V
Current
1.0 A
• High efficiency, low VF
• High current capability
• High reliability
• High surge current capability
• Low power loss.
• For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application.
MECHANICAL DATA
• Case: Molded plastic
• Epoxy: UL 94V0 rate flame retardant
• Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
• Polarity: Color band denotes cathode
• High temperature soldering guaranteed:
260 °C/10 seconds/9.5mm lead lengths
at 2.3kg tension
• Mounting position: Any
• Weight: 0.20 gram
Dimensions in mm.
Maximum Ratings and Electrical Characteristics at 25 ºC
SFT14G
SFT16G
400
280
400
1.0 A
SFT18G
600
420
600
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
rr
C
j
T
j
T
stg
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
9.5mm Lead Length @ T
A
= 55 °C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC Method)
200
140
200
30 A
Maximum Reverse Recovery Time from
I
F
= 0.5A; I
R
= 1A; I
RR
= 0.25A
Typical Junction Capacitance at 1 MHz
and reverse voltage of 4V
DC
Operating Temperature Range
Storage Temperature Range
20 pF
35 nS
10 pF
-65 to +150 °C
-65 to +150 °C
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th (j-a)
Maximum Instantaneous Forward Voltage @ = 1.0 A
Maximum DC Reverse Current @ Ta = 25 °C
at Rated DC Blocking Voltage @ Ta =125°C
Typical Thermal Resistance
(See note)
0.95 V
1.3 V
5 µA
100 µA
100 °C/W
1.7 V
NOTE: Mount on Cu-Pad size 5mm x 5mm on PCB.
May - 08
SFT14G ........ SFT18G
Rating And Charasterictic Curves
MAXIMUM AVERAGE FORWARD CURRENT
DERATING
I
F
, instantaneous forward current (A)
TYPICAL FORWARD CHARACTERISTICS
I
F(AV)
, average forward current (A)
100
Tj = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
1.5
Single Phase Half Wave 60Hz
Resistive or Inductive Load
9.5mm Lead Length
10
1
4G
T1
SF
1.0
T
SF
G
16
0.1
8
T1
SF
G
0.5
0.01
0.4
0
0
25
50
75
100
125
150
175
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
F
, forward voltage (V)
MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wawe
JEDEC Method
Tamb, ambient temperature (°C)
I
FSM
, peak forward surge current (A)
TYPICAL JUNCTION CAPACITANCE
70
30
25
20
15
10
5
0
1
2
5
Cj, junction capacitance (pF)
35
60
50
40
30
20
10
0
0.1
HT
13
G-
T
j
= 25 °C
HT
1
5G
HT16
G-HT
1 8G
10
20
50
100
0.5 1
5 10
50 100
1000
Number of cycles at 60 Hz
V
R
, reverse voltage (V)
TYPICAL REVERSE CHARACTERISTICS
1000
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NON INDUCTIVE
10W
NON INDUCTIVE
I
R
, Instantaneous reverse
current (µA)
trr
+0.5A
100
T
j
= 125 °C
10
T
j
= 75 °C
(+)
50vDC
(APPROX)
(-)
DUT
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
1
T
j
= 25 °C
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
NOTES: 1. Rise Time = 7ns max. Input Impedance =
1 megohm 22 pf
2. Rise Time = 10 ns max. Sourse Impedance =
50 ohms
1cm
SET TIME BASE FOR
5/ 10ns/ cm
0.1
0
20
40
60
80
100
120
140
Percent of rated peak reverse voltage (%)
May - 08
Microcontroller MCU
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