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M25PE40VMP6G

Description
512K X 8 SPI BUS SERIAL EEPROM, DSO8
Categorystorage    storage   
File Size306KB,60 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M25PE40VMP6G Overview

512K X 8 SPI BUS SERIAL EEPROM, DSO8

M25PE40VMP6G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instructionVSON, SOLCC8,.25
Contacts8
Reach Compliance Codecompli
ECCN code3A991.B.1.B.1
Is SamacsysN
Maximum clock frequency (fCLK)50 MHz
Data retention time - minimum20
Durability100000 Write/Erase Cycles
JESD-30 codeR-XDSO-N8
length6 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals8
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Package body materialUNSPECIFIED
encapsulated codeVSON
Encapsulate equivalent codeSOLCC8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, VERY THIN PROFILE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1 mm
Serial bus typeSPI
Maximum standby current0.00001 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
width5 mm
Maximum write cycle time (tWC)25 ms
write protectHARDWARE/SOFTWARE
Base Number Matches1
M25PE40
4 Mbit, low voltage, Page-Erasable Serial Flash memory with
byte alterability, 50 MHz SPI bus, standard pinout
Features
SPI bus compatible serial interface
4 Mbit Page-Erasable Flash memory
Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
SubSector Erase (4 Kbytes)
Sector Erase (64 Kbytes)
Bulk Erase (4 Mbits)
2.7 V to 3.6 V single supply voltage
50 MHz clock rate (maximum)
Deep Power-down mode 1 µA (typical)
Electronic Signature
– JEDEC standard two-byte signature
(8013h)
Software Write Protection on a 64 Kbyte sector
basis
Hardware Write Protection of the memory area
selected using the BP0, BP1 and BP2 bits
More than 100 000 Write cycles
More than 20 year data retention
Packages
– ECOPACK® (RoHS compliant)
SO8N (MN) 150 mils width
SO8W (MW) 208 mils width
VFQFPN8 (MP)
6 × 5 mm (MLP8)
January 2007
Rev 7
1/59
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