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K4S643233E-TN80

Description
Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Categorystorage    storage   
File Size71KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K4S643233E-TN80 Overview

Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

K4S643233E-TN80 Parametric

Parameter NameAttribute value
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts86
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G86
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals86
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize2MX32
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
width10.16 mm
Base Number Matches1
K4S643233E-SE(N)
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks
Synchronous DRAM
LVTTL(3.0V & 3.3V)
Extended Temperature
TSOP / 90Ball FBGA
(V
DD
/V
DDQ
3.0V/3.0V, 3.3V/3.3V)
Revision 1.4
November 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.4 (Nov. 2001)

K4S643233E-TN80 Related Products

K4S643233E-TN80 K4S643233E-TE80 K4S643233E-TN10 K4S643233E-TN70 K4S643233E-TE70 K4S643233E-TE10
Description Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Parts packaging code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP2, TSOP2, TSOP2, TSOP2, TSOP2,
Contacts 86 86 86 86 86 86
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 6 ns 6 ns 5.5 ns 5.5 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86
length 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm
memory density 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 32 32 32 32 32 32
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 86 86 86 86 86 86
word count 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000 2000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C -25 °C -25 °C -25 °C -25 °C
organize 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES YES
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER OTHER OTHER
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
Base Number Matches 1 1 1 1 - -
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