NDC7003P datasheet, PDF - EEWORLD Datasheet

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NDC7003P: Description340mA, 50V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size158KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDC7003P Overview

340mA, 50V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

NDC7003P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	0.34 A
Maximum drain current (ID)	0.34 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	1.4 W
Maximum power dissipation(Abs)	0.96 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

NDC7003P Related Products

	NDC7003P	NDC7003P/S62Z	NDC7003P/L99Z	NDC7003P/D87Z
Description	340mA, 50V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	340mA, 50V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	340mA, 50V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	340mA, 50V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V	50 V	50 V
Maximum drain current (ID)	0.34 A	0.34 A	0.34 A	0.34 A
Maximum drain-source on-resistance	5 Ω	5 Ω	5 Ω	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2
Number of terminals	6	6	6	6
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power consumption environment	1.4 W	1.4 W	1.4 W	1.4 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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