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NAND512R4A1CZA1E

Description
Flash, 32MX16, 15000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
Categorystorage    storage   
File Size150KB,5 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

NAND512R4A1CZA1E Overview

Flash, 32MX16, 15000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

NAND512R4A1CZA1E Parametric

Parameter NameAttribute value
Parts packaging codeBGA
package instruction8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
Contacts63
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time15000 ns
JESD-30 codeR-PBGA-B63
JESD-609 codee1
memory density536870912 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNAND TYPE
Base Number Matches1
NAND FLASH
528 Byte, 264 Word Page Family
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
1.8V, 3V Supply Flash Memories
DATA BRIEFING
FEATURES SUMMARY
s
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32Mbit spare area
– Cost effective solutions for mass storage ap-
plications
s
Figure 1. Packages
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
TSOP48
12 x 20 mm
s
SUPPLY VOLTAGE
– 1.8V device: V
CC
= 1.65 to 1.95V
– 3.0V device: V
CC
= 2.7 to 3.6V
FBGA
s
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
VFBGA63 8.5x15x1 mm
TFBGA63 8.5x15x1.2 mm
VFBGA63 9x11x1 mm
s
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
s
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
s
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
s
s
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transi-
tions
s
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM MODE
– Internal Cache Register to improve the pro-
gram throughput
s
s
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
s
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
s
DEVELOPMENT TOOLS
– Error Correction Code software and hard-
ware models
– Bad Blocks Management and Wear Leveling
algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
s
s
s
August 2003
For further information please contact the STMicroelectronics distributor nearest to you.
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