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TC59SM804BFT-75

Description
IC 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM
Categorystorage    storage   
File Size2MB,49 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TC59SM804BFT-75 Overview

IC 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM

TC59SM804BFT-75 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTSOP2
package instructionTSOP2, TSOP54,.46,32
Contacts54
Reach Compliance Codeunknown
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
length22.22 mm
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals54
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.001 A
Maximum slew rate0.16 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm
Base Number Matches1
TC59SM816/08/04BFT/BFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS
×
4 BANKS
×
16-BITS SYNCHRONOUS DYNAMIC RAM
8,388,608-WORDS
×
4 BANKS
×
8-BITS SYNCHRONOUS DYNAMIC RAM
16,777,216-WORDS
×
4 BANKS
×
4-BITS SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words
×
4 banks
×
16 bits and TC59SM808BFT/BFTL is organized as 8,388,608 words
×
4 banks
×
8 bits and The
TC59SM804BFT/BFTL is organized as 16,777,216 words
×
4 banks
×
4 bits. Fully synchronous operations are
referenced to the positive edges of clock input and can transfer data up to 143M words per second. These devices
are controlled by commands setting. Each bank are kept active so that DRAM core sense amplifiers can be used as
a cache. The refresh functions, either Auto Refresh or Self Refresh are easy to use. By having a programmable
Mode Register, the system can choose the most suitable modes which will maximize its performance. These devices
are ideal for main memory in applications such as work-stations.
FEATURES
PARAMETER
-70
t
CK
t
AC
t
RC
Clock Cycle Time (min)
Access Time from CLK (max)
Ref/Active to Ref/Active Command Period (min)
7 ns
40 ns
5.4 ns
56 ns
80 mA
100 mA
3 mA
TC59SM816/M808/M804
-75
7.5 ns
45 ns
5.4 ns
65 ns
75 mA
95 mA
3 mA
-80
8 ns
48 ns
6 ns
68 ns
70 mA
90 mA
3 mA
t
RAS
Active to Precharge Command Period (min)
I
CC1
Operation Current (max) (Single bank)
I
CC4
Burst Operation Current (max)
I
CC6
Self-Refresh Current (max)
Single power supply of 3.3 V
±
0.3 V
Up to 143 MHz clock frequency
Synchronous operations: All signals referenced to the positive edges of clock
Architecture:
Pipeline
Organization
TC59SM816BFT/BFTL: 4,194,304 words
×
4 banks
×
16 bits
TC59SM808BFT/BFTL: 8,388,608 words
×
4 banks
×
8 bits
TC59SM804BFT/BFTL: 16,777,216 words
×
4 banks
×
4 bits
Programmable Mode register
Auto Refresh and Self Refresh
Burst Length:
1, 2, 4, 8, Full page
CAS Latency:
2, 3
Single Write Mode
Burst Stop Function
Byte Data Controlled by LDQM, UDQM (TC59SM816)
8K Refresh cycles/64 ms
Interface:
LVTTL
Package
TC59SM816BFT/BFTL: TSOPII54-P-400-0.80B
TC59SM808BFT/BFTL: TSOPII54-P-400-0.80B
TC59SM804BFT/BFTL: TSOPII54-P-400-0.80B
000707EBA2
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
2001-06-11
1/49

TC59SM804BFT-75 Related Products

TC59SM804BFT-75 TC59SM804BFTL-80 TC59SM804BFTL-75 TC59SM804BFT-80 TC59SM804BFT-70 TC59SM804BFTL-70
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Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32
Contacts 54 54 54 54 54 54
Reach Compliance Code unknown unknown unknown unknown unknown unknown
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.4 ns 6 ns 5.4 ns 6 ns 5.4 ns 5.4 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 125 MHz 133 MHz 125 MHz 143 MHz 143 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
interleaved burst length 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 code R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
JESD-609 code e0 e0 e0 e0 e0 e0
length 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm
memory density 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 4 4 4 4 4 4
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 54 54 54 54 54 54
word count 67108864 words 67108864 words 67108864 words 67108864 words 67108864 words 67108864 words
character code 64000000 64000000 64000000 64000000 64000000 64000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 64MX4 64MX4 64MX4 64MX4 64MX4 64MX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
Encapsulate equivalent code TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32 TSOP54,.46,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192 8192
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES YES
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
Maximum standby current 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A
Maximum slew rate 0.16 mA 0.15 mA 0.16 mA 0.15 mA 0.17 mA 0.17 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
Is it lead-free? Contains lead - Contains lead - Contains lead Contains lead
Maker - - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor

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