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CA3160E

Description

Basic information of CA3160E amplifier:

CA3160E is an OPERATIONAL AMPLIFIER. Commonly used packaging methods are PLASTIC, MS-001-BA, DIP-8

CA3160E amplifier core information:

The minimum operating temperature of the CA3160E is -55 °C and the maximum operating temperature is 125 °C. Its peak reflow temperature is NOT SPECIFIED. The maximum bias current at 25°C is: 0.00005 µA

How to simply check the efficiency of an amplifier? Looking at its slew rate, the nominal slew rate of the CA3160E is 10 V/us. The maximum slew rate of the CA3160E given by the manufacturer is 15 mA. Its minimum voltage gain is 50000. When the op amp is used in closed loop, at a certain closed-loop gain (usually 1 or 2, 10, etc.), the frequency when the CA3160E gain becomes 0.707 times the low-frequency gain is 4000 kHz.

The nominal supply voltage of CA3160E is 7.5 V, and its corresponding nominal negative supply voltage is -7.5 V. The input offset voltage of the CA3160E is 15000 µV (input offset voltage: the compensation voltage added between the two input terminals to make the output terminal of the operational amplifier 0V (or close to 0V).)

Related dimensions of CA3160E:

The width of CA3160E is: 7.62 mm and the length is 9.585 mm. CA3160E has 8 terminals. Its terminal position type is: DUAL. Terminal pitch is 2.54 mm. Total pins: 8

CA3160E amplifier additional information:

CA3160E adopts the VOLTAGE-FEEDBACK architecture. It belongs to the low-bias class of amplifiers. It does not belong to the low offset class of amplifiers. The frequency compensation status of CA3160E is: YES. Its temperature grade is: MILITARY.

CA3160E is not Rohs certified. The corresponding JESD-30 code is: R-PDIP-T8. The corresponding JESD-609 code is: e0. The packaging code of CA3160E is: DIP. CA3160E packaging materials are mostly PLASTIC/EPOXY.

The package shape is RECTANGULAR. The form of CA3160E package pins is: IN-LINE. Its terminal form is: THROUGH-HOLE. The maximum seat height is 5.33 mm.

CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size31KB,1 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Related ProductsFound1parts with similar functions to CA3160E
Alternative parts:CA3160E
Download Datasheet Parametric View All

CA3160E Overview

Basic information of CA3160E amplifier:

CA3160E is an OPERATIONAL AMPLIFIER. Commonly used packaging methods are PLASTIC, MS-001-BA, DIP-8

CA3160E amplifier core information:

The minimum operating temperature of the CA3160E is -55 °C and the maximum operating temperature is 125 °C. Its peak reflow temperature is NOT SPECIFIED. The maximum bias current at 25°C is: 0.00005 µA

How to simply check the efficiency of an amplifier? Looking at its slew rate, the nominal slew rate of the CA3160E is 10 V/us. The maximum slew rate of the CA3160E given by the manufacturer is 15 mA. Its minimum voltage gain is 50000. When the op amp is used in closed loop, at a certain closed-loop gain (usually 1 or 2, 10, etc.), the frequency when the CA3160E gain becomes 0.707 times the low-frequency gain is 4000 kHz.

The nominal supply voltage of CA3160E is 7.5 V, and its corresponding nominal negative supply voltage is -7.5 V. The input offset voltage of the CA3160E is 15000 µV (input offset voltage: the compensation voltage added between the two input terminals to make the output terminal of the operational amplifier 0V (or close to 0V).)

Related dimensions of CA3160E:

The width of CA3160E is: 7.62 mm and the length is 9.585 mm. CA3160E has 8 terminals. Its terminal position type is: DUAL. Terminal pitch is 2.54 mm. Total pins: 8

CA3160E amplifier additional information:

CA3160E adopts the VOLTAGE-FEEDBACK architecture. It belongs to the low-bias class of amplifiers. It does not belong to the low offset class of amplifiers. The frequency compensation status of CA3160E is: YES. Its temperature grade is: MILITARY.

CA3160E is not Rohs certified. The corresponding JESD-30 code is: R-PDIP-T8. The corresponding JESD-609 code is: e0. The packaging code of CA3160E is: DIP. CA3160E packaging materials are mostly PLASTIC/EPOXY.

The package shape is RECTANGULAR. The form of CA3160E package pins is: IN-LINE. Its terminal form is: THROUGH-HOLE. The maximum seat height is 5.33 mm.

CA3160E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDIP
package instructionPLASTIC, MS-001-BA, DIP-8
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Amplifier typeOPERATIONAL AMPLIFIER
ArchitectureVOLTAGE-FEEDBACK
Maximum bias current (IIB) at 25C0.00005 µA
Nominal Common Mode Rejection Ratio90 dB
frequency compensationYES
Maximum input offset voltage15000 µV
JESD-30 codeR-PDIP-T8
JESD-609 codee0
length9.585 mm
low-biasYES
low-dissonanceNO
Negative supply voltage upper limit-8 V
Nominal Negative Supply Voltage (Vsup)-7.5 V
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5/15 V
Certification statusNot Qualified
Maximum seat height5.33 mm
Nominal slew rate10 V/us
Maximum slew rate15 mA
Supply voltage upper limit8 V
Nominal supply voltage (Vsup)7.5 V
surface mountNO
technologyBIMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Nominal Uniform Gain Bandwidth4000 kHz
Minimum voltage gain50000
width7.62 mm
Base Number Matches1
Intersil
Drivers, Buffers, Op-Amps and Arrays
Full Bridge MOSFET Drivers
Mfr.Õs
Type
HIP4080AIP
HIP4081AIP
HIP4082IP
Description
FET Driver with Comparator, Under Voltage, for Class D Amps,Voice Coils, and Motor Control
FET Driver with Under Voltage, High Performance for DC-DC Converters, UPS and Motor Control
FET Driver with Under Voltage Independent FET Control
Peak Output
Current
Each Drive
2.50 A
2.50 A
1.25 A
Supply Voltage
Bias/Bus
(V)
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
No Load Maint.
Supply Current
(mA)
18.5
16.5
6.5
Temperature
Range
(¡C)
Ð40 to +85
Ð40 to +85
Ð40 to +85
Package
Type
20 Lead PDI
20 Lead PDI
16 Lead PDI
High Performance Buffers
Single
Mfr.Õs
Type
PDIP
HFA1112IP
HA3-5033-5
HA3-5002-5
SOIC
Ñ
Ñ
HA9P5002-5
850 MHz Programmable Gain (+2, ±1)
250 MHz Video Buffer
110 MHz High Output Current
Description
Ð3 dB
Bandwidth @
Min. Acl
(MHz)
850
250
110
Slew
Rate
(V/µs)
2050
1100
1300
Settling
Time
(ns to %)
11-0.10
50-0.10
50-0.10
Input
Offset
Voltage
(mV)
8
5
5
Bias
Current
(µA)
25.0
20.0
2.0
Output
Current
(mA/Amp)
60
100
220
Supply
Range
(±V
DC
)
4.5 to 5.5
5.0 to 16.0
6.0 to 16.0
Supply
Current
(mA/Amp)
21.0
21.0
8.3
General Purpose Op-Amps
Single
Mfr.Õs
Type
DIP
CA3130AE
CA3130E
CA3140AE
CA3140E
HA7-2645-5
CA3160E
CA3080E
CA741E
HA3-2525-5
BiMOS Op-Amp with MOSFET Input/CMOS Output
BiMOS Op-Amp with MOSFET Input/CMOS Output
BiMOS Op-Amp with MOSFET Input/Bipolar Output
BiMOS Op-Amp with MOSFET Input/Bipolar Output
High Voltage Op-Amp
BiMOS Op-Amp with MOSFET Input/CMOS Output
Operational Transconductance Amplifier (OTA)
High Gain
Uncompensated High Slew Rate Op-Amp
Description
Minimum
Stable
Gain
1
1
1
1
1
1
1
1
3
GBWP
(MHz)
15.0
15.0
4.5
4.5
4.0
4.0
2.0
1.0
20.0
Slew
Rate
(V/µs)
30.0
30.0
9.0
9.0
5.0
10.0
75.0
0.5
120.0
Offset
Voltage
(mV)
2.0
8.0
2.0
5.0
2.0
6.0
0.4
1.0
5.0
Bias
Current
(µA)
5.000 pA
5.000 pA
10.000 pA
10.000 pA
0.012
5.000 pA
2.000
0.080
0.125
Maximum
Supply
Voltage
(±V)
8.0
8.0
18.0
18.0
50.0
8.0
18.0
22.0
20.0
Supply
Current
(mA/Amp)
2.00
2.00
4.00
4.00
3.20
2.00
1.00
1.70
4.00
No. of
Leads
8
8
8
8
8
8
8
8
8
Dual
CA3240AE
CA3240E
CA1458E
Dual BiMOS Op-Amp with MOSFET Input/Bipolar Output
Dual BiMOS Op-Amp with MOSFET Input/Bipolar Output
High Gain
1
1
1
4.5
4.5
1.0
9.0
9.0
0.5
2.0
5.0
1.0
10.000 pA
10.000 pA
0.080
18.0
18.0
22.0
4.00
4.00
1.70
8
8
8
Transistor/Diode Arrays
Transistor Arrays
Mfr.Õs
Type
CA3046
CA3081
CA3082
CA3083
CA3086
CA3146E
CA3183AE
CA3096E
CA3096AE
CA3096CE
HFA3127B
Description
3 Transistors Plus a Differential Pair, fT > 300 MHz, 2 Matched Pairs ±5 mV
7 Common Emitter General Purpose NPN High Current Transistors
7 Common Collector General Purpose NPN High Current Transistors
5 Independent NPN Transistors. Q1 and Q2 Matched; II0 (at 1 mA) 2.5 µA Max.
3 Isolated NPN Transistors Plus a Differential Pair. fT>500 MHz Typ. from DC to 120 MHz
3 Transistors Plus a Differential Pair, fT > 500 MHz Typ. Operation from DC to 120 MHz
5 High Current/High Voltage NPN Transistors. Q1 and Q2 Matched at 1 mA
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent 8 GHz NPN Transistors, NF = 3.5 dB at 1 GHz (NPN/PNP)
V
(BR)CEO
Min.
(V)
15
16
16
15
15
30
40
35/Ð40
35/Ð40
24/Ð24
8
V
(BR)CBO
Min.
(V)
20
20
20
20
20
40
50
45/Ð40
45/Ð40
30/Ð24
12
h
FE
Min.
40
40
40
40
40
40
40
150/20
150/20
100/15
40
I
C
Max.
(mA)
50
100
100
100
50
75
75
50/Ð10
50/Ð10
50/Ð10
40
Package
Type
14 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
14 Lead PDIP
14 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead SOIC
13
Diode Array
Mfr.Õs
Type
CA3039
Description
6 Individual Ultra-Fast Low Capacitance Matched Diodes
V
(BR)R
Min.
(V)
5
I
R
Max.
(µA)
0.1
C
D
Typ.
(pF)
0.65
V
F1
-V
F2
Max.
(mV)
5 (IF=1 mA)
Package
Type
12 Lead TO-5
Same Day Shipments For Product In Stock
ALLIED
c
823

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