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302UFR120PD

Description
250 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB
CategoryDiscrete semiconductor    diode   
File Size71KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

302UFR120PD Overview

250 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB

302UFR120PD Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionO-MUPM-H1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationHIGH POWER
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-205AB
JESD-30 codeO-MUPM-H1
JESD-609 codee0
Maximum non-repetitive peak forward current6850 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Minimum operating temperature-40 °C
Maximum output current250 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I2031/A
70/300U(R)..D SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
Diffused diode
Wide current range
High voltage ratings up to 1600V
High surge current capabilities
Stud cathode and stud anode version
250A
Typical Applications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
70/300U(R)..D
250
145
390
6550
6850
214
195
1200 to 1600
- 40 to 200
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
case style
DO-205AB (DO-9)
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