HB56UW473EJN-6 datasheet, PDF - EEWORLD Datasheet

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HB56UW473EJN-6: DescriptionEDO DRAM Module, 4MX72, 60ns, CMOS, DIMM-168; Categorystorage storage; File Size496KB，35 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56UW473EJN-6 Overview

EDO DRAM Module, 4MX72, 60ns, CMOS, DIMM-168

HB56UW473EJN-6 Parametric

Parameter Name	Attribute value
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	301989888 bit
Memory IC Type	EDO DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	25.4 mm
self refresh	NO
Maximum standby current	0.018 A
Maximum slew rate	0.945 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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HB56UW473EJN Series,

HB56UW465EJN Series

4,194,304-word

72-bit High Density Dynamic RAM Module

4,194,304-word

64-bit High Density Dynamic RAM Module

ADE-203-724A (Z)

Rev.1.0

Feb. 20, 1997

Description

The HB56UW473EJN, HB56UW465EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family,

and have been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

The HB56UW473EJN is a 4M

72 dynamic RAM module, mounted 18 pieces of 16-Mbit DRAM

(HM51W17805) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD).

The HB56UW465EJN is a 4M

64 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

(HM51W17805) sealed in SOJ package and 1 pieces of serial EEPROM (24C02) for Presence Detect (PD).

The HB56UW473EJN, HB56UW465EJN offer Extended Data Out (EDO) Page Mode as a high speed

access mode. An outline of the HB56UW473EJN, HB56UW465EJN is 168-pin socket type package (dual

lead out). Therefore, the HB56UW473EJN, HB56UW465EJN make high density mounting possible

without surface mount technology. The HB56UW473EJN, HB56UW465EJN provide common data inputs

and outputs. Decoupling capacitors are mounted on the module board.

Features

•

168-pin socket type package (Dual lead out)



Outline: 133.35 mm (Length)

25.40 mm (Height)

9.00 mm (Thickness)



Lead pitch: 1.27 mm

•

Single 3.3 V (±0.3 V) supply

•

High speed



Access time: t

RAC

= 50/60/70ns (max)

CAC

= 13/15/18ns (max)

•

Low power dissipation



Active mode: 3.73/3.40/3.08 W (max) (HB56UW473EJN Series)

3.31/3.02/2.74 W (max) (HB56UW465EJN Series)



Standby mode (TTL): 129.6 mW (max) (HB56UW473EJN Series)

(TTL): 115.2 mW (max) (HB56UW465EJN Series)

(CMOS): 9.72 mW (max) (L-version) (HB56UW473EJN Series)

(CMOS): 8.64 mW (max) (L-version) (HB56UW465EJN Series)

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