HYB15T2G402C2F-25F datasheet, PDF

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HYB15T2G402C2F-25F: DescriptionDDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63; Categorystorage storage; File Size3MB，53 Pages; ManufacturerQIMONDA; Environmental Compliance

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HYB15T2G402C2F-25F Overview

DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63

HYB15T2G402C2F-25F Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	LFBGA, BGA63,9X11,32
Contacts	63
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B63
length	12.5 mm
memory density	2147483648 bit
Memory IC Type	DDR DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	63
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature
organize	512MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA63,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
power supply	1.5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.36 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.026 A
Maximum slew rate	0.31 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.45 V
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8.5 mm
Base Number Matches	1

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July 2008

H Y B 15 T 2G 402C 2 F

H Y B 15 T 2G 802C 2 F

2 - G b i t D u a l D i e D o u b l e - D a t a - R a t e - T w o SD R A M

DDR2 SDRAM

EU RoHS Compliant Products

Internet Data Sheet

Rev. 1.00

HYB15T2G402C2F-25F Related Products

	HYB15T2G402C2F-25F	HYB15T2G402C2F-3S	HYB15T2G402C2F-2.5	HYB15T2G802C2F-25F	HYB15T2G802C2F-3S	HYB15T2G802C2F-2.5
Description	DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63	DDR DRAM, 512MX4, 0.45ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63	DDR DRAM, 512MX4, 0.4ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63	DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63	DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63	DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA63, GREEN, PLASTIC, FBGA-63
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LFBGA, BGA63,9X11,32	LFBGA, BGA63,9X11,32	LFBGA, BGA63,9X11,32	LFBGA, BGA63,9X11,32	LFBGA, BGA63,9X11,32	LFBGA, BGA63,9X11,32
Contacts	63	63	63	63	63	63
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Maximum access time	0.4 ns	0.45 ns	0.4 ns	0.4 ns	0.45 ns	0.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz	333 MHz	400 MHz	400 MHz	333 MHz	400 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B63	R-PBGA-B63	R-PBGA-B63	R-PBGA-B63	R-PBGA-B63	R-PBGA-B63
length	12.5 mm	12.5 mm	12.5 mm	12.5 mm	12.5 mm	12.5 mm
memory density	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	4	4	4	8	8	8
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	63	63	63	63	63	63
word count	536870912 words	536870912 words	536870912 words	268435456 words	268435456 words	268435456 words
character code	512000000	512000000	512000000	256000000	256000000	256000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	95 °C	95 °C	95 °C	95 °C	95 °C	95 °C
organize	512MX4	512MX4	512MX4	256MX8	256MX8	256MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
Encapsulate equivalent code	BGA63,9X11,32	BGA63,9X11,32	BGA63,9X11,32	BGA63,9X11,32	BGA63,9X11,32	BGA63,9X11,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
power supply	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192
Maximum seat height	1.36 mm	1.36 mm	1.36 mm	1.36 mm	1.36 mm	1.36 mm
self refresh	YES	YES	YES	YES	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8	4,8	4,8
Maximum standby current	0.026 A	0.026 A	0.026 A	0.026 A	0.026 A	0.026 A
Maximum slew rate	0.31 mA	0.294 mA	0.31 mA	0.31 mA	0.294 mA	0.31 mA
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V
Nominal supply voltage (Vsup)	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	8.5 mm	8.5 mm	8.5 mm	8.5 mm	8.5 mm	8.5 mm
Maker	-	QIMONDA	QIMONDA	QIMONDA	QIMONDA	QIMONDA

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