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BC818-25S62Z

Description
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size46KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BC818-25S62Z Overview

Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon

BC818-25S62Z Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
BC818-25 / BC818-40
BC818-25
BC818-40
C
E
SOT-23
Mark: 6F. / 6G.
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38. See BC817 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
25
30
5.0
1.5
-55 to +150
Units
V
V
V
A
°C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BC818-25 / BC818-40
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997
Fairchild Semiconductor Corporation

BC818-25S62Z Related Products

BC818-25S62Z BC818-25L99Z BC818-40L99Z BC818-25D87Z BC818-40S62Z BC818-40D87Z
Description Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknow unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Collector-emitter maximum voltage 25 V 25 V 25 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 160 250 160 250 250
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1 1 - -

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