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8TQ080SPBF

Description
8 A, 80 V, SILICON, RECTIFIER DIODE, TO-263AB
CategoryDiscrete semiconductor    diode   
File Size213KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

8TQ080SPBF Overview

8 A, 80 V, SILICON, RECTIFIER DIODE, TO-263AB

8TQ080SPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionR-PSSO-G2
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.58 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current850 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin PD-21041 rev. B 06/06
8TQ...SPbF
SCHOTTKY RECTIFIER
8 Amp
I
F(AV)
= 8 Amp
V
R
= 80 - 100V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 8 Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The 8TQ .. Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175° C
junction temperature. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and re-
verse battery protection.
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
175° C T
J
operation
Values
8
80 - 100
850
0.58
- 55 to 175
Case Styles
Base
Cathode
2
1
3
N/C
Anode
D
2
PAK
www.irf.com
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