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8TQ080STRRPBF

Description
8 A, 80 V, SILICON, RECTIFIER DIODE, TO-263AB
CategoryDiscrete semiconductor    diode   
File Size213KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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8TQ080STRRPBF Overview

8 A, 80 V, SILICON, RECTIFIER DIODE, TO-263AB

8TQ080STRRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.58 V
Maximum non-repetitive peak forward current230 A
Number of components1
Maximum operating temperature175 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage80 V
surface mountYES
technologySCHOTTKY
Base Number Matches1
Bulletin PD-21041 rev. B 06/06
8TQ...SPbF
SCHOTTKY RECTIFIER
8 Amp
I
F(AV)
= 8 Amp
V
R
= 80 - 100V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 8 Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The 8TQ .. Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175° C
junction temperature. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and re-
verse battery protection.
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
175° C T
J
operation
Values
8
80 - 100
850
0.58
- 55 to 175
Case Styles
Base
Cathode
2
1
3
N/C
Anode
D
2
PAK
www.irf.com
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