Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR4G - SDR4N
and
SDR4GSMS – SDR4NSMS
3 AMP
400 – 1200 Volts
50-80 nsec
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SDR4 __ __ __
⏐
⏐
⏐
⏐
⏐
⏐
⏐
L
⏐
⏐
⏐
⏐
L
Screening
= None
TX = TX Level
TXV = TXV Level
S = S Level
2/
ULTRA FAST RECTIFIER
Features:
L
Package
___ = Axial
SMS = Surface Mount Square Tab
Voltage
G = 400 V
J = 600 V
K = 800 V
M = 1000 V
N = 1200 V
•
Ultra Fast Recovery: 50-80 nsec Max. @ 25°C
85-125 nsec Max. @ 100°C
•
Single Chip Construction
•
PIV to 1200 Volts
•
Low Reverse Leakage Current
•
Hermetically Sealed
•
For High Efficiency Applications
•
Available in Axial Leaded & Surface Mount versions
•
Metallurgically Bonded
•
TX, TXV, and S-Level Screening Available
2/
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SDR4G
SDR4J
SDR4K
SDR4M
SDR4N
Symbol
V
RRM
V
RWM
V
R
Io
Value
400
600
800
1000
1200
3
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 3/8 "
Junction to End Tab
Amps
I
FSM
75
Amps
Top & Tstg
R
θJL
R
θJE
-65 to +175
20
14
ºC
ºC/W
Notes:
1/ For Ordering Information, Price, Operating Curves, and
Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
Axial Leaded
SMS (Square)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0015B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR4G - SDR4N
and
SDR4GSMS – SDR4NSMS
Part Type Symbol
SDR2G – J
SDR2K – N
SDR2G – J
SDR2K – N
Electrical Characteristics
Instantaneous Forward Voltage Drop
(I
F
= 3 Adc, T
A
= 25ºC, 300 µs pulse)
Instantaneous Forward Voltage Drop
(I
F
= 3 Adc, T
A
= -55ºC, 300 µs pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, 300 µs pulse minimum)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, 300 µs pulse minimum)
Junction Capacitance
(V
R
= 10 Vdc, T
A
= 25ºC, f = 1MHz)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1A, I
RR
= 0.25A, T
A
= 25ºC)
Max
1.9
2.1
2.1
2.3
5
0.5
40
50
60
70
80
Units
Vdc
Vdc
μA
μA
pF
V
F
V
F
I
R
I
R
C
J
SDR2G – J
SRS1K
SRS1M
SRS1N
t
rr
nsec
Case Outline:
(Axial)
DIMENSIONS
D
B
D
ØC
ØA
DIM
A
B
C
D
MIN
.120”
.130”
.047”
1.00”
MAX
.180”
.230”
.053”
---
Case Outline:
Surface Mount (SMS)
B
A
DIMENSIONS
DIM
MIN
0.172”
A
0.180”
B
0.022”
C
0.002”
D
A
C
D
MAX
0.180”
0.280”
0.028”
––
Dimensions prior to solder dipping
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0015B
DOC
Embedded System
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