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307URA200

Description
330 A, 2000 V, SILICON, RECTIFIER DIODE, DO-205AB
CategoryDiscrete semiconductor    diode   
File Size140KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

307URA200 Overview

330 A, 2000 V, SILICON, RECTIFIER DIODE, DO-205AB

307URA200 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionO-CUPM-H1
Reach Compliance Codecompliant
Other featuresHIGH SURGE CAPABILITY
applicationHIGH VOLTAGE HIGH POWER
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-205AB
JESD-30 codeO-CUPM-H1
JESD-609 codee0
Maximum non-repetitive peak forward current8640 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature180 °C
Maximum output current330 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I2032 rev. B 03/03
301U(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
Wide current range
High voltage ratings up to 2500V
High surge current capabilities
Stud cathode and stud anode version
High resistance to acceleration
300A
Typical Applications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
301U(R)
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
160 to 200
330
120
520
8250
8640
340
311
1600 to 2000
- 40 to 180
250
300
120
470
6050
6335
183
167
2500
- 40 to 180
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
case style
DO-205AB (DO-9)
www.irf.com
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