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S40KR

Description
Rectifier Diode, 1 Phase, 1 Element, 40A, 800V V(RRM), Silicon, DO-5,
CategoryDiscrete semiconductor    diode   
File Size932KB,2 Pages
ManufacturerDaco Semiconductor Co., Ltd.
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Rectifier Diode, 1 Phase, 1 Element, 40A, 800V V(RRM), Silicon, DO-5,

S40KR Parametric

Parameter NameAttribute value
package instructionO-MUPM-D1
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JEDEC-95 codeDO-5
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current595 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current40 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage800 V
Maximum reverse current10 µA
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1
DACO SEMICONDUCTOR CO., LTD.
Features
High Surge Capability
Types Up to 1600V V
RRM
S40B(R)
THRU
S40Y(R)
STANDARD RECOVERY DIODE STUD TYPES
40A
40 Amp Recti er
100-1600 Volts
Maximum Ratings
Operating Temperature:
Storage Temperature:
-55 C to +175
DO-5
M
-55 C to +175
J
Part Number
S40B(R)
S40D(R)
S40G(R)
S40J(R)
S40K(R)
S40M(R)
S40Q(R)
S40V(R)
S40Y(R)
Maximum
Recurrent
Peak Reverse
Voltage
100V
200V
400V
600V
800V
1000V
1200V
1400V
1600V
Maximum
RMS Voltage
70V
140V
280V
420V
560V
700V
840V
990V
1130V
Maximum DC
Blocking
Voltage
100V
200V
400V
600V
800V
1000V
1200V
1400V
1600V
K
P
D
B
N
C
G
F
A
E
Electrical Characteristics @ 25
Average Forward
Current
(Per pkg)
Peak F orward Sur ge
Cur rent
Maximum
Instantaneous
Forward Voltage *
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
Voltage
(Per leg)
Unless Otherwise Specified
40 A
595A
1.1V
T
C
= 140
DIM
Notes :
1.Standard Polarity Stud is Cathod
2.Reverse Polarity: Stud is Anode
Inches
Min
A
B
C
D
E
F
0.669
-----
-----
0.422
0.115
-----
-----
0.236
-----
-----
0.140
0.687
0.794
1.020
0.453
0.200
0.460
0.280
-----
0.589
0.063
0.175
Max
1/4 –28 UNF
17.19
-----
-----
10.72
2.93
-----
-----
6.00
-----
-----
3.56
17.44
20.16
25.91
11.50
5.08
11.68
7.00
-----
14.96
1.60
4.45
Min
I
F(AV)
I
FSM
V
F
Millimeters
Max
8.3ms , half sine
I
FM
= 40A
T
J
= 25
T
J
= 25
T
J
= 175
I
R
μ
10 A
12 mA
Maximum Thermal
Resistance Junction
To Case
Mounting torque
R jc
Inch pounds
(in-pb)
1.35 C/W
30
G
J
K
M
N
Pulse Test: Pulse Width 300
μsec.
Duty Cycle
<
2%
P
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