STTH200R04TV
Ultrafast recovery diode
Main product characteristics
I
F(AV)
V
RRM
T
j
V
F (typ)
t
rr (typ)
2 x 100 A
400 V
150° C
0.87 V
40 ns
A1
K1
A2
K2
A1
Features and benefits
■
■
■
■
■
K1
A2
K2
ISOTOP
STTH200R04TV1
Ultrafast
Very low switching losses
High frequency and high pulsed current
operation
Low leakage current
Insulated package:
– ISOTOP
Electrical insulation = 2500 V
RMS
Capacitance = 45 pF
Order codes
Part Number
Marking
STTH200R04TV1
STTH200R04TV1
Description
The STTH200R04TV series uses ST's new 400 V
planar Pt doping technology. The STTH200R04 is
specially suited for switching mode base drive and
transistor circuits, such as welding equipment.
March 2007
Rev 1
1/7
www.st.com
7
Characteristics
STTH200R04TV
1
Table 1.
Symbol
V
RRM
V
RSM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Characteristics
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Average forward current,
δ
= 0.5
Repetitive peak forward current
Per diode
Per diode
Per package
t
p
= 5 µs, F = 1 kHz square
T
c
= 80° C
T
c
= 65° C
Value
400
400
150
100
200
2000
1000
-65 to + 150
150
Unit
V
V
A
A
A
A
A
°C
°C
Surge non repetitive forward current t
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
Table 2.
Thermal parameters
Symbol
R
th(j-c)
R
th(c)
Parameter
Per diode
Junction to case
Total
Coupling thermal resistance
0.30
0.1
° C/W
Value
0.50
Unit
When the diodes are used simultaneously:
ΔT
j(diode1)
= P
(diode1)
x
R
th(j-c)
(per diode) + P
(diode2)
x
R
th(c)
Table 3.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25° C
T
j
= 125° C
T
j
= 25° C
V
R
= V
RRM
Min.
Typ
Max.
80
µA
80
800
1.35
I
F
= 100 A
0.95
0.87
1.2
1.1
V
Unit
V
F(2)
Forward voltage drop
T
j
= 100° C
T
j
= 150° C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 0.8 x I
F(AV)
+ 0.003 x I
F2(RMS)
2/7
STTH200R04TV
Table 4.
Symbol
Characteristics
Dynamic characteristics
Parameter
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
Min.
Typ
Max.
100
50
40
22
1500
0.4
1000
3.5
ns
V
70
55
32
2900
A
nC
ns
Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T
j
= 25° C
I
RM
Q
RR
S
t
fr
V
FP
Reverse recovery current
Reverse recovery charges
Softness factor
Forward recovery time
Forward recovery voltage
I
F
= 100 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125° C
I
F
= 100 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125° C
I
F
= 100 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125° C
I
F
= 100 A
dI
F
/dt = 100 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25° C
I
F
= 100 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
Figure 1.
P(W)
140
120
Conduction losses versus
average current
δ=0.5
d=1
Figure 2.
I
FM
(A)
Forward voltage drop versus
forward current
200
180
δ=0.2
δ=0.1
160
140
120
T
J
=150°C
(Maximum values)
100
80
60
40
20
δ=0.05
100
80
60
T
T
J
=150°C
(Typical values)
40
I
F(AV)
(A)
0
0
10
20
30
40
50
60
70
80
90
100
110
120 130
T
J
=25°C
(Maximum values)
δ
=tp/T
tp
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
FM
(V)
1.6
1.8
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dI
F
/dt (typical values)
Z
th(j-c)
/R
th(j-c)
1.0
Single pulse
ISOTOP
50
45
40
35
30
25
20
15
10
I
RM
(A)
I
F
= 100A
V
R
=320V
T
j
=125 °C
T
j
=25 °C
tp(s)
0.1
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
5
0
10
100
dI
F
/dt(A/µs)
1000
3/7
Characteristics
STTH200R04TV
Figure 5.
t
RR
(ns)
Reverse recovery time versus
dI
F
/dt (typical values)
I
F
= 100A
V
R
=320V
Figure 6.
5000
4500
4000
3500
Reverse recovery charges versus
dI
F
/dt (typical values)
I
F
=100A
V
FR
=1.5 x V
F
max.
T
j
=125°C
t
FR
(ns)
300
275
250
225
200
175
150
125
100
75
50
25
0
T
j
=125 °C
3000
2500
2000
T
j
=25 °C
1500
1000
dI
F
/dt(A/µs)
10
100
1000
500
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
Figure 7.
Relative variations of dynamic
parameters versus junction
temperature
Figure 8.
Transient peak forward voltage
versus dI
F
/dt (typical values)
1.4
1.2
1.0
0.8
0.6
Q
RR
[T
j
]/Q
RR
[T
j
= 125° C] and I
RM
[T
j
]/I
RM
[T
j
= 125° C]
I
F
= 100A
V
R
=320V
V
Fp
(V)
12
11
10
9
8
I
F
=100A
T
j
=125°C
I
RM
7
6
5
Q
RR
4
3
2
0.4
0.2
T
j
(°C)
0.0
25
50
75
100
125
150
1
0
0
50
100
150
200
dI
F
/dt(A/µs)
250
300
350
400
450
500
Figure 9.
Forward recovery time versus dI
F
/dt Figure 10. Junction capacitance versus
(typical values)
reverse voltage applied (typical
values)
C(pF)
10000
I
F
=100A
V
FR
=1.1 x V
F
max.
T
j
=125°C
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
t
FR
(ns)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
1000
dI
F
/dt(A/µs)
100
0
100
200
300
400
500
V
R
(V)
1
10
100
1000
4/7
STTH200R04TV
Package information
2
Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Table 5.
ISOTOP dimensions
Dimensions
Ref.
Millimeters
Min.
E
G2
Inches
Min.
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
Max.
12.20
9.10
8.20
0.85
2.05
38.20
31.70
25.50
24.15
A
C
11.80
8.90
7.8
0.75
1.95
37.80
31.50
25.15
23.85
A1
A
A1
C2
E2
B
C
C2
F1
F
D
D1
E
P1
E1
G
D1
D
S
E2
G
24.80 typ.
14.90
12.60
3.50
4.10
4.60
4.00
4.00
30.10
15.10
12.80
4.30
4.30
5.00
4.30
4.40
30.30
0.976 typ.
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
0.594
0.504
0.169
0.169
0.197
0.69
0.173
1.193
B
G1
G2
ØP
G1
E1
F
F1
P
P1
S
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
5/7
京公网安备 11010802033920号
EEWORLD
