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30CLJQ150

Description
30 A, 150 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size63KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

30CLJQ150 Overview

30 A, 150 V, SILICON, RECTIFIER DIODE

30CLJQ150 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionR-CBCC-N3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-CBCC-N3
Maximum non-repetitive peak forward current130 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current30 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
PD -93950B
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30CLJQ150
30 Amp, 150V
Major Ratings and Characteristics
Characteristics
I
F(AV)
V
RRM
(Per Leg)
I
FSM
@ tp = 8.3ms half-sine
(Per Leg)
V
F
@ 15Apk, T
J
=125°C
(Per Leg)
30CLJQ150 Units
30
150
A
V
Description/Features
The 30CLJQ150 center tap Schottky rectifier has been
expressly designed to meet the rigorous requirements of hi-
rel environments. It is packaged in the hermetic surface
mount SMD-0.5 ceramic package. The device's forward
voltage drop and reverse leakage current are optimized
for the lowest power loss and the highest circuit efficiency
for typical high frequency switching power supplies and
resonent power converters. Full MIL-PRF-19500 quality
conformance testing is available on source control
drawings to TX, TXV and S quality levels.
Hermetically Sealed
Center Tap
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
130
0.85
A
V
T
J
, T
stg
Operating and storage
-55 to 150
°C
CASE STYLE
2
1
3
ANODE COMMONANODE
CATHODE
IR Case Style SMD-0.5
www.irf.com
1
9/22/00

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