BAP63-02
Silicon PIN diode
Rev. 04 — 8 January 2008
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
NXP
Semiconductors
Product specification
Silicon PIN diode
FEATURES
•
High speed switching for RF signals
•
Low diode capacitance
•
Low diode forward resistance
•
Very low series inductance
•
For applications up to 3 GHz.
handbook, halfpage
BAP63-02
PINNING
PIN
DESCRIPTION
cathode
anode
APPLICATIONS
•
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
Marking code:
K5.
Fig.1 Simplified outline (SOD523) and symbol.
1
2
1
2
Top view
MAM405
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
≤
90
°C
CONDITIONS
−
−
−
−65
−65
MIN.
MAX.
50
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
Rev. 04 - 8 January 2008
2 of 7
NXP
Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse leakage current
diode capacitance
CONDITIONS
I
F
= 50 mA
V
R
= 35 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
τ
L
charge carrier life time
−
0.36
0.32
0.25
2.5
1.95
1.17
15.6
10.3
8.3
0.19
0.24
0.28
0.16
0.20
0.25
0.10
0.16
0.20
0.09
0.14
0.18
TYP.
0.95
BAP63-02
MAX.
1.1
10
−
−
0.32
3.5
3
1.8
1.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
UNIT
nA
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
I
F
= 100 mA; f = 100 MHz; note 1 0.9
when switched from I
F
= 10 mA to 310
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
0.6
L
S
Note
series inductance
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
Rev. 04 - 8 January 2008
3 of 7
NXP
Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP63-02
handbook, halfpage
10
MGW126
handbook, halfpage
400
MGW127
rD
(Ω)
Cd
(fF)
300
1
200
100
10
−1
10
−1
1
10
I F (mA)
10
2
0
0
4
8
12
16
VR (V)
f = 1 MHz; T
j
= 25
°C.
20
f = 100 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
2
0
MGW128
MGW129
|
s 21
|
handbook, halfpage
2
(1)
(2)
(3)
0
(dB)
−0.1
|
s 21
|
(dB)
−10
−0.2
(4)
−20
−0.3
−30
−0.4
−0.5
0
1
2
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
f (GHz)
3
−40
0
1
2
f (GHz)
3
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
°C.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Fig.4
Insertion loss (|s
21
|
2
) of the diode in on-state
as a function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
Rev. 04 - 8 January 2008
4 of 7
NXP
Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
BAP63-02
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.65
0.58
bp
0.34
0.26
c
0.17
0.11
D
1.25
1.15
E
0.85
0.75
HE
1.65
1.55
v
0.1
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
JEITA
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
02-12-13
06-03-16
Rev. 04 - 8 January 2008
5 of 7
京公网安备 11010802033920号
EEWORLD
