BLF6G38LS-50 datasheet, PDF - EEWORLD Datasheet

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BLF6G38LS-50: DescriptionS BAND, Si, N-CHANNEL, RF POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size78KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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S BAND, Si, N-CHANNEL, RF POWER, MOSFET

BLF6G38LS-50 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts	2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
Maximum drain current (ID)	16.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-CDFP-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BLF6G38-50; BLF6G38LS-50

WiMAX power LDMOS transistor

Rev. 01 — 12 February 2008

Preliminary data sheet

1. Product proﬁle

1.1 General description

50 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3800 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25

C in a class-AB production test circuit.

Mode of operation

1-carrier N-CDMA

[2]

[1]

[2]

[3]

(MHz)

3400 to 3600

L(AV)

(V)

(W)

L(M)[1]

(W)

ACPR

885k

ACPR

1980k

(dBc)

−64

[3]

−49

[3]

(dB) (%) (dBc)

L(M)

stands for peak output power.

Single carrier N-CDMA with pilot, paging, sync and 6 trafﬁc channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.

Measured within 30 kHz bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 trafﬁc channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability

on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz

and 3600 MHz, a supply voltage of 28 V, an I

of 450 mA, a power gain of 14 dB, a

drain efﬁciency of 23 % and a peak output power of 70 W:

Qualiﬁed up to a maximum V

operation of 32 V

Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range

Integrated ESD protection

Excellent ruggedness

High efﬁciency

Excellent thermal stability

Designed for broadband operation

Internally matched for ease of use

Low gold plating thickness on leads

BLF6G38LS-50 Related Products

	BLF6G38LS-50	BLF6G38-50
Description	S BAND, Si, N-CHANNEL, RF POWER, MOSFET	S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-2	ROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts	2	2
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
Maximum drain current (ID)	16.5 A	16.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND	S BAND
JESD-30 code	R-CDFP-F2	R-CDFM-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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