TSOP22..LL1
Vishay Semiconductors
Photo Modules for PCM Remote Control Systems
Available Types For Different Carrier Frequencies
Type
TSOP2230LL1
TSOP2236LL1
TSOP2238LL1
TSOP2256LL1
fo
30 kHz
36 kHz
38 kHz
56 kHz
Type
TSOP2233LL1
TSOP2237LL1
TSOP2240LL1
fo
33.0 kHz
36.7 kHz
40.0 kHz
Description
The TSOP22.. – series are miniaturized receivers for
infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
16644
Features
D
Photo detector and preamplifier in one package
D
Internal filter for PCM frequency
D
TTL and CMOS compatibility
D
Output active low
D
Improved shielding against electrical field
disturbance
D
Suitable burst length
10
cycles/burst
Special Features
D
Small size package
D
High immunity against disturbance light
D
No occurrence of disturbance pulses at the output
D
Short settling time after power on (< 200µs)
D
Contiunous data transmission possible
( 800 bursts/s)
Block Diagramm
2
Input
Control
Circuit
V
S
30 kW
1
OUT
PIN
AGC
Band
Pass
Demodu-
lator
3
GND
16591
Document Number 82171
Rev. 1, 19–Nov–01
www.vishay.com
1 (7)
TSOP22..LL1
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25°C
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
Test Conditions
(Pin 2)
(Pin 2)
(Pin 1)
(Pin 1)
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
–0.3...6.0
5
–0.3...6.0
5
100
–25...+85
–25...+85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
(T
amb
x
85
°C)
t
x
10 s, 1 mm from case
Basic Characteristics
T
amb
= 25°C
Parameter
Supply Current (Pin 2)
Supply Current (Pin 2)
Supply Voltage (Pin 2)
Transmission Distance
Test Conditions
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
Symbol Min.
I
SD
0.8
I
SH
V
S
4.5
d
V
OL
E
e min
Typ.
1.1
1.4
35
250
0.4
Max.
1.5
5.5
Unit
mA
mA
V
m
mV
mW/m
2
E
v
= 0, test signal see fig.7,
IR diode TSAL6200, I
F
= 250 mA
Output Voltage Low (Pin 1) I
OL
= 0.5 mA,E
e
= 0.7 mW/m
2
, f = f
o
Irradiance (30 – 40 kHz)
Pulse width tolerance:
t
pi
– 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.7
Irradiance (56 kHz)
Pulse width tolerance:
t
pi
–5/f
o
< t
po
< t
pi
+6/f
o
,
test signal see fig.7
Irradiance
Directivity
Angle of half transmission distance
0.2
E
e min
0.3
0.5
mW/m
2
E
e max
ϕ
1/2
30
±45
W/m
2
deg
Application Circuit
100
W
*)
2
TSOP22..LL1
TSAL62..
1
**)
3
16590
+5V
>10 kW
optional
4.7
mF
*)
mC
GND
*) recommended to suppress power supply disturbances
**) the output voltage should not be hold continuously at a voltage below 3.3V by the external circuit.
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2 (7)
Document Number 82171
Rev. 1, 19–Nov–01
TSOP22..LL1
Vishay Semiconductors
Suitable Data Format
The circuit of the TSOP22..LL1 is designed in that way
that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and
disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
•
Carrier frequency should be close to center
frequency of the bandpass (e.g. 38 kHz).
•
Burst length should be 10 cycles/burst or longer.
•
After each burst which is between 10 cycles and
70 cycles a gap time of at least 14 cycles is
neccessary.
•
For each burst which is longer than 1.8 ms a
corresponding gap time is necessary at some
time in the data stream. This gap time should be at
least 4 times longer than the burst.
•
Up to 800 short bursts per second can be
received continuously.
Some examples for suitable data format are:
NEC Code, Toshiba Micom Format, Sharp Code,
RC5 Code, RC6 Code, R–2000 Code.
When a disturbance signal is applied to the TSOP22..
it can still receive the data signal. However the
sensitivity is reduced to that level that no unexpected
pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP22.. are:
•
DC light (e.g. from tungsten bulb or sunlight)
•
Continuous signal at 38 kHz or at any other
frequency
•
Signals from fluorescent lamps with electronic
ballast with low modulation
(see Figure A or Figure B).
0
5
10
time [ms]
15
20
Figure A: IR Signal from Fluorescent Lamp with low Modulation
0
5
10
time [s]
15
20
Figure B: IR Signal from Fluorescent Lamp with high Modulation
Document Number 82171
Rev. 1, 19–Nov–01
www.vishay.com
3 (7)
TSOP22..LL1
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25_C, unless otherwise specified)
E
e min
– Threshold Irradiance ( mW/m
2
)
1.0
/ E – Rel. Responsitivity
e
2.0
f(E)=f
0
1.6
1.2
0.8
0.4
0.0
0.7
94 8143
0.8
0.6
0.4
0.2
0.0
0.8
0.9
1.0
1.1
1.2
1.3
f/f
0
– Relative Frequency
e
E
min
f = f
0
"5%
Df
( 3dB ) = f
0
/10
0.0
94 8147
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
Figure 1. Frequency Dependence of Responsivity
1.0
0.9
t
po
– Output Pulse Length (ms)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
96 12110
Figure 4. Sensitivity vs. Electric Field Disturbances
E
e min
– Threshold Irradiance ( mW/m
2
)
10
f = f
0
1 kHz
Input burst duration
10 kHz
1
l
= 950 nm,
optical test signal, fig.7
100 Hz
1.0
10.0
100.0 1000.0 10000.0
94 9106
0.1
0.01
0.1
1
10
100
1000
E
e
– Irradiance ( mW/m
2
)
DV
sRMS –
AC Voltage on DC Supply Voltage (mV)
Figure 2. Sensitivity in Dark Ambient
E
e min
– Threshold Irradiance (mW/m
2
)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.10
1.00
10.00
E – DC Irradiance (W/m
2
)
100.00
Ambient,
l
= 950 nm
Correlation with ambient light sources
(Disturbanceeffect):10W/m
2
^1.4klx
(Stand.illum.A,T=2855K)^8.2klx
(Daylight,T=5900K)
Figure 5. Sensitivity vs. Supply Voltage Disturbances
E
e min
– Threshold Irradiance (mW/m
2
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
90
Sensitivity in dark ambient
96 12111
0.0
–30 –15 0
15 30 45 60 75
96 12112
T
amb
– Ambient Temperature (
°C
)
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
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4 (7)
Document Number 82171
Rev. 1, 19–Nov–01
TSOP22..LL1
Vishay Semiconductors
Optical Test Signal
E
e
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
1.0
T
on
,T – Output Pulse Length (ms)
off
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
10.0
100.0 1000.0 10000.0
l
= 950 nm,
optical test signal, fig.8
T
off
T
on
t
t
pi
*
T
* t
pi
w
10/fo is recommended for optimal function
Output Signal
1)
2)
16110
V
O
V
OH
V
OL
7/f
0
<
t
d
<
15/f
0
t
po
=
t
pi
"
6/f
0
t
t
d1 )
96 12114
E
e
– Irradiance (mW/m
2
)
t
po2 )
Figure 7. Output Function
S (
l
)
rel
– Relative Spectral Sensitivity
E
e
Optical Test Signal
1.2
1.0
0.8
0.6
0.4
0.2
Figure 10. Output Pulse Diagram
600
ms
T = 60 ms
600
ms
t
94 8134
V
O
V
OH
V
OL
Output Signal,
( see Fig.10 )
0
750
T
on
T
off
t
94 8408
850
950
1050
1150
l
– Wavelength ( nm )
Figure 8. Output Function
0.8
0.7
Envelope Duty Cycle
0.6
0.5
0.4
0.3
0.2
f = 38 kHz
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
96 12223p2
0.1
0.0
10
16156
20 30 40 50 60 70 80
Burstlength [number of cycles/burst]
90
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
Document Number 82171
Rev. 1, 19–Nov–01
www.vishay.com
5 (7)
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