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BYV26EGP/73-E3

Description
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size347KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

BYV26EGP/73-E3 Overview

DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

BYV26EGP/73-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-15
package instructionPLASTIC, DO-15, 2 PIN
Contacts2
Reach Compliance Codeunknown
Base Number Matches1
BYV26DGP & BYV26EGP
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
800 V, 1000 V
30 A
75 ns
1.3 V
175 °C
®
ted*
aten
P
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
DO-204AC (DO-15)
Features
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm)
lead length (See Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non repetitive peak reverse energy
(1)
Operating junction and storage temperature range
Notes:
(1) Peak reverse energy measured at I
R
= 400 mA, T
J
= T
J
max. on inductive load, t = 20 µs
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
RSM
T
J
, T
STG
BYV26DGP
800
560
800
1.0
30
10
- 65 to + 175
BYV26EGP
1000
700
1000
Unit
V
V
V
A
A
mj
°C
Document Number 88554
10-Aug-05
www.vishay.com
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