AMERICAN BRIGHT
OPTOELECTRONICS CORP.
Gap DOMILED BL-PDx-GJS Series
•
Feature:
1. Surface mount LED.
2. 120° viewing angle.
3. Small package outline (LxWxH) of 3.2 x 2.8 x 1.8 mm.
4. Qualified according to JEDEC moisture sensitivity Level 2.
5. Compatible to both IR reflow soldering and TTW soldering.
•
Package Dimension:
Recommended Solder Pad
V.3 Page: 1 of 7
AMERICAN BRIGHT
OPTOELECTRONICS CORP.
Gap DOMILED BL-PDx-GJS Series
•
Optical Characteristics:
Chip Technology /
Color
GaP /
Red, 625 nm
Luminous Intensity @ If = 20mA
Iv ( mcd )
11.2 … 28.5
11.2 … 14.0
14.0 … 18.0
18.0 … 22.4
22.4 … 28.5
Part Number
BL-PDR-GJS-C10
•
•
•
BIN L1
BIN L2
BIN M1
BIN M2
•
BL-PDR-GJS-C20
•
•
•
BIN M1
BIN M2
BIN N1
BIN N2
28.5 … 71.5
28.5 … 35.5
35.5 … 45.0
45.0 … 56.0
56.0 … 71.5
•
BL-PDO-GJS-C10
•
•
•
BIN L1
BIN L2
BIN M1
BIN M2
GaP /
Orange, 605 nm
11.2 … 28.5
11.2 … 14.0
14.0 … 18.0
18.0 … 22.4
22.4 … 28.5
•
BL-PDY-GJS-C10
•
•
•
BIN L1
BIN L2
BIN M1
BIN M2
GaP /
Yellow, 587 nm
11.2 … 28.5
11.2 … 14.0
14.0 … 18.0
18.0 … 22.4
22.4 … 28.5
•
BL-PDG-GJS-C20
•
•
•
BIN L1
BIN L2
BIN M1
BIN M2
GaP /
Green, 570 nm
11.2 … 28.5
11.2 … 14.0
14.0 … 18.0
18.0 … 22.4
22.4 … 28.5
•
BL-PDG-GJS-C30
•
•
•
BIN M1
BIN M2
BIN N1
BIN N2
18.0 … 45.0
18.0 … 22.4
22.4 … 28.5
28.5 … 35.5
35.5 … 45.0
•
Forward voltage
@ If=20 mA.
2.2 V (typ.); 2.6 V (max)
Chip Type
GaP
Viewing angle
at 50% Iv
120°
Reverse current, I
R
@ V
R
= 5V, (max)
100
µA
V.3 Page: 2 of 7
AMERICAN BRIGHT
OPTOELECTRONICS CORP.
Gap DOMILED BL-PDx-GJS Series
NOTE:
1. Other luminous intensity groups are also available upon request.
2. Luminous intensity is measured with an accuracy of
±11%.
3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one
wavelength group is allowed for each reel.
4. An optional Vf binning is also available upon request. Binning scheme is as per following table.
•
Absolute Maximum Ratings:
Parameter
DC forward current.
Peak pulse current; (tp
≤
10
µs,
Duty cycle = 0.005)
Reverse voltage.
LED junction temperature.
Operating temperature.
Storage temperature.
Power dissipation ( at room temperature )
Maximum Value
30
500
5
100
-40 … +100
-40 … +100
75
Unit
mA
mA
V
°C
°C
°C
mW
•
Vf Binning:
Vf Bin @ 20mA
01
02
03
04
Forward voltage (V)
1.55 … 1.85
1.85 … 2.15
2.15 … 2.45
2.45 … 2.60
V.3 Page: 3 of 7
AMERICAN BRIGHT
OPTOELECTRONICS CORP.
Gap DOMILED BL-PDx-GJS Series
•
Wavelength Grouping:
Color
BL-PDR; Red
BL-PDA; Amber
Group
Full
Full
W
X
Wavelength distribution (nm)
620 – 635
610 – 621
610 - 615
615 - 621
600 – 612
600 - 603
603 - 606
606 - 609
609 - 612
582 – 594
582 – 585
585 – 588
588 - 591
591 - 594
564.5 – 576.5
564.5 – 567.5
567.5 – 570.5
570.5 – 573.5
573.5 – 576.5
BL-PDO; Orange
Full
W
X
Y
Z
BL-PDY; Yellow
Full
W
X
Y
Z
BL-PDG; Green
Full
W
X
Y
Z
Wavelength is measured with an accuracy of
±1
nm.
V.3 Page: 4 of 7
AMERICAN BRIGHT
OPTOELECTRONICS CORP.
•
Gap DOMILED BL-PDx-GJS Series
Typical electro-optical characteristics curves:
Fig. 2 Forward current vs. forward voltage.
Forward Current vs. Forward Voltage
40
Fig. 1 Relative luminous intensity vs. forward current.
Intensity vs. DC Forw ard Current
Relative intensity. Normalized at 20 mA.
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
FORW ARD CURRENT (m A)
Forward Current (mA)
35
30
25
20
15
10
5
0
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
GaP
Forward Voltage (V)
Fig. 3 Radiation pattern.
30°
20°
10°
0°
1.0
Fig. 4 Maximum forward current vs. temperature.
35
30
40°
0.8
25
50°
0.6
Forward Current, If
20
15
60°
70°
80°
0.4
10
0.2
5
0
90°
0
0
10
20
30
40
50
60
70
80
90
100
Ambient Temperature
V.3 Page: 5 of 7
京公网安备 11010802033920号
EEWORLD
