3 A, 400 V, SILICON, RECTIFIER DIODE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | O-PALF-W2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| application | MEDIUM POWER |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V |
| JESD-30 code | O-PALF-W2 |
| JESD-609 code | e0 |
| Maximum non-repetitive peak forward current | 178 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 3 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 400 V |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| 30S4 | 30S | 30S10 | 30S2 | 30S3 | 30S6 | 30S1 | 30S5 | 30S8 | |
|---|---|---|---|---|---|---|---|---|---|
| Description | 3 A, 400 V, SILICON, RECTIFIER DIODE | 3 A, 1000 V, SILICON, RECTIFIER DIODE | 3 A, 1000 V, SILICON, RECTIFIER DIODE | 3 A, 200 V, SILICON, RECTIFIER DIODE | 3 A, 300 V, SILICON, RECTIFIER DIODE | 3 A, 600 V, SILICON, RECTIFIER DIODE | 3 A, 100 V, SILICON, RECTIFIER DIODE | 3 A, 1000 V, SILICON, RECTIFIER DIODE | 3 A, 800 V, SILICON, RECTIFIER DIODE |
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