1N5817 thru 1N5819
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 20
to
40
Volts
FORWARD CURRENT
- 1.0
Amperes
DO- 41
FEATURES
●
Metal-Semiconductor junction with gard ring
●
Epitaxial construction
●
Low forward voltage drop
●
High current capability
●
The plastic material carries UL recognition 94V-0
●
For use in low vlotage, high frequency inverters,
1.0(25.4)
MIN.
.034(0.9)
DIA
.028(0.7)
free wheeling, and polarity protection applications
.205(5.2)
MAX
.107(2.7)
DIA
.080(2.0)
MECHANICAL DATA
●
Case: JEDEC DO-41 molded plastic
●
Polarity: Color band denotes cathode
●
Weight: 0.012 ounces , 0.34 grams
●
Mounting position: Any
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@TJ=100℃
@T
A
=75℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
1N5817
20
14
20
1N5818
30
21
30
1.0
1N5819
40
28
40
UNIT
V
V
V
A
I
FSM
V
F
V
F
I
R
C
J
R
θJA
T
J
T
STG
0.450
0.750
40
0.550
0.875
1.0
10
110
80
-55 to +150
-55 to +150
0.600
0.900
A
V
V
mA
pF
℃/W
℃
℃
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
~ 145 ~
RATING AND CHARACTERTIC CURVES
1N5817 thru 1N5819
FIG. 1
–
FORWARD CURRENT DERATING CURVE
1.0
PEAK FORWARD SURGE CURRENT,
(AMPERES
）
AVERAGE FORWARD CURRENT
AMPERES
40
FIG. 2
–
MAXIMUM NON-REPETITIVE SURGE CURRENT
0.8
30
0.6
20
0.4
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.2
0
10
PULSE WIDTH 8.3mS
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
0
1
2
5
10
20
50
100
25
50
75
100
125
150
175
AMBIENT TEMPERATURE (℃)
NUMBER OF CYCLES AT 60Hz
FIG.3
–
TYPICAL JUNCTION CAPACITANCE
1000
INSTANTANEOUS FORWARD CURRENT,
(A)
10
FIG.4-TYPICAL FORWARD CHARACTERISTICS
1N5817
CAPACITANCE, (pF)
100
1N5818
1N5819
1.0
T
J
= 25°C f = 1 MHz
T
J
= 25°C
PULSE WIDTH 300us
1
1
4
10
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
REVERSE VOLTAGE, (VOLTS)
INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)
~ 146 ~
Microcontroller MCU
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