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Datasheet> All Categories > semiconductor> Discrete semiconductor> P600A
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P600A

Description
6 A, 50 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size31KB，2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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6 A, 50 V, SILICON, RECTIFIER DIODE

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P600A thru P600M
PLASTIC SILICON RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 6.0
Amperes
R-6
FEATURES
●
Low cost
●
Diffused junction
●
Low forward voltage drop
●
Low reverse leakage current
●
High current capability
●
The plastic material carries UL recognition 94V-0
1.0(25.4)
MIN
.052(1.3)
DIA
.048(1.2)
.360(9.1)
.340(8.6)
2100
.360(9.1)
DIA
.340(8.6)
MECHANICAL DATA
●
Case: JEDEC R-6 molded plastic
●
Polarity: Color band denotes cathode
●
Weight: 0.07 ounces , 2.1 grams
●
Mounting position: Any
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 6.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@T
J
=100℃
@T
A
=60℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
P600A
50
35
50
P600B
100
70
100
P600D
200
140
200
P600G
400
280
400
6.0
P600J
600
420
600
P600K
800
560
800
P600M
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJA
T
J
T
STG
400
0.95
10
100
100
10
-55 to +125
-55 to +150
A
V
uA
pF
℃/W
℃
℃
NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction of lead.
~ 17 ~

P600A Related Products

P600A P600B P600G P600D P600J P600K P600M
Description 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE 6 A, 800 V, SILICON, RECTIFIER DIODE 6 A, 1000 V, SILICON, RECTIFIER DIODE
Maker - HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic
package instruction - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code - unknow unknow unknown unknow unknow unknown
application - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials - SILICON SILICON SILICON SILICON SILICON SILICON
Diode type - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1 V 1 V 1 V 1 V 1 V 1 V
JESD-30 code - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current - 300 A 300 A 300 A 300 A 300 A 300 A
Number of components - 1 1 1 1 1 1
Phase - 1 1 1 1 1 1
Number of terminals - 2 2 2 2 2 2
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current - 6 A 6 A 6 A 6 A 6 A 6 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND ROUND ROUND ROUND ROUND
Package form - LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage - 100 V 400 V 200 V 600 V 800 V 1000 V
Maximum reverse current - 10 µA 10 µA 10 µA 10 µA 10 µA 10 µA
surface mount - NO NO NO NO NO NO
Terminal form - WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location - AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL

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