S3GB datasheet, PDF - EEWORLD Datasheet

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S3GB: Description3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA; CategoryDiscrete semiconductor diode; File Size34KB，2 Pages; ManufacturerHY Electronic; Websitehttp://www.hygroup.com.tw

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S3GB Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA

S3GB Parametric

Parameter Name	Attribute value
Maker	HY Electronic
package instruction	R-PDSO-C2
Reach Compliance Code	unknow
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	5 µA
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL
Base Number Matches	1

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S3AB thru S3MB

SURFACE MOUNT

GLASS PASSIVATED RECTIFIERS

REVERSE VOLTAGE

POWER DISSIPATION

- 50

1000Volts

- 3.0

Amperes

FEATURES

●

Glass passivated chip

●

For surface mounted applications

●

Low reverse leakage current

●

Low forward voltage drop

●

High current capability

●

Plastic material has UL flammability

SMB

.083(2.11)

.075(1.91)

.155(3.94)

.130(3.30)

classification 94V-0

.185(4.70)

.160(4.06)

.012(.305)

.006(.152)

MECHANICAL DATA

●

Case： Molded Plastic

●

Polarity:Color band denotes cathode

●

Weight: 0.003 ounces,0.093 grams

●

Mounting position: Any

.096(2.44)

.084(2.13)

.060(1.52)

.030(0.76)

.220(5.59)

.200(5.08)

.008(.203)

.002(.051)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Rectified Current

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load (JEDEC Method)

Maximum Forward Voltage at 3.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Typical Thermal Resistance (Note3)

Operating Temperature Range

Storage Temperature Range

=25℃

=100℃

=75

℃

SYMBOL

RRM

RMS

(AV)

S3AB

S3BB

100

S3DB

200

140

200

S3GB

400

280

400

3.0

S3JB

600

420

600

S3KB

800

560

800

S3MB

1000

700

1000

UNIT

FSM

θJL

θJA

STG

200

1.2

5.0

250

-55 to +150

℃/W

℃

NOTES:1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

2.Thermal resistance junction to lead.

3.Thermal resistance junction to ambient.

~ 33 ~

S3GB Related Products

	S3GB	S3AB	S3BB	S3DB	S3JB	S3KB	S3MB
Description	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA	3 A, 50 V, SILICON, RECTIFIER DIODE	3 A, 100 V, SILICON, RECTIFIER DIODE	3 A, 200 V, SILICON, RECTIFIER DIODE	RECTIFIER DIODE	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA	RECTIFIER DIODE
package instruction	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A	100 A	100 A	100 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	400 V	50 V	100 V	200 V	600 V	800 V	1000 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1	-	1

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