NN514405LTT-50 datasheet, PDF - EEWORLD Datasheet

NN514405LTT-50: DescriptionEDO DRAM, 1MX4, 50ns, CMOS, PDSO20; Categorystorage storage; File Size516KB，21 Pages; ManufacturerUnited Microelectronics Corporation; Websitehttp://www.umc.com/

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NN514405LTT-50 Overview

EDO DRAM, 1MX4, 50ns, CMOS, PDSO20

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	TSSOP, TSSOP20/26,.36
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G20
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	EDO DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	20
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP20/26,.36
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
self refresh	YES
Maximum standby current	0.00005 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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