128K
X
32 5V NOR FLASH MODULE
SMD 5962-94716**
WF128K32-XXX5
FEATURES
Access times of 50*, 60, 70, 90, 120, 150ns
Packaging:
• 66 pin, PGA type, 1.075 inch square, Hermetic Ceramic
HIP (Package 400)
• 68 lead, Hermetic CQFP (G2U), 22.4mm (0.880 inch)
square, 3.56mm (0.140 inch) high (Package 510)
• 68 lead, Hermetic CQFP (G2L), 22.4mm (0.880 inch)
square, 4.06mm (0.160 inch) high (Package 528)
Sector architecture
• 8 equal size sectors of 16KBytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
100,000 erase/program cycles minimum
Organized as 128Kx32
Commercial, industrial and military temperature ranges
5 volt programming
Low power CMOS
Embedded erase and program algorithms
TTL compatible inputs and CMOS outputs
Built-in decoupling caps and multiple ground pins for low
noise operation
Page program operation and internal program control time
Weight
WF128K32-XG2LX5 - 8 grams typical
WF128K32-XG2UX5 - 8 grams typical
WF128K32-XH1X5 - 13 grams typical
This product is subject to change without notice.
Note: For programming information and waveforms refer to Flash Programming 1M5 Application
Note AN0036.
* The access time of 50ns is available in Industrial and Commercial temperature ranges only.
** For reference only. See SMD table on page 10.
FIGURE 1 – PIN CONFIGURATION FOR WF128K32N-XH1X5
Top View
I/O
8
I/O
9
I/O
10
A
14
A
16
A
11
A
0
NC
I/O
0
I/O
1
I/O
2
WE
2
#
CS
2
#
GND
I/O
11
A
10
A
9
A
15
V
CC
CS
1
#
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE#
NC
WE
1
#
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
7
A
12
NC
A
13
A
8
I/O
16
I/O
17
I/O
18
V
CC
CS
4
#
WE
4
#
I/O
27
A
4
A
5
A
6
WE
3
#
CS
3
#
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
1
A
2
WE1# CS1#
WE2# CS2#
WE3# CS3#
WE4# CS4#
Pin Description
I/O
0-31
A
0-16
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Block Diagram
OE#
A0-16
128K x 8
128K x 8
128K x 8
128K x 8
A
3
I/O
23
I/O
22
I/O
21
I/O
20
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
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4335.15E-0816-ss-WF128K32-XXX5
WF128K32-XXX5
FIGURE 3 – PIN CONFIGURATION FOR WF128K32-XG2UX5 AND WF128K32-XG2LX5
TOP VIEW
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3
#
GND
CS
4
#
WE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
PIN DESCRIPTION
I/O
0-31
A
0-16
WE
1-4
#
CS
1-4
#
OE#
V
CC
GND
NC
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
Not Connected
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1
#
OE#
CS
2
#
NC
WE
4
#
WE
3
#
WE
2
#
NC
NC
NC
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
BLOCK DIAGRAM
WE1# CS1#
WE2# CS2#
WE3# CS3#
WE4# CS4#
OE#
A0-16
128K x 8
128K x 8
128K x 8
128K x 8
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
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4335.15E-0816-ss-WF128K32-XXX5
WF128K32-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Operating Temperature
Supply Voltage Range (V
CC
)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance (write/erase cycles) Mil Temp
A
9
Voltage for sector protect (V
ID
) (3)
RECOMMENDED OPERATING CONDITIONS
Unit
°C
V
V
°C
°C
years
cycles
V
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
10
100,000 min
-2.0 to +12.5
Parameter
Supply Voltage
Operating Temp. (Mil, Q)
Operating Temp. (Ind)
Operating Temp. (Com)
Symbol
V
CC
T
A
T
A
T
A
Min
4.5
-55
-40
0
Max
5.5
+125
+85
+70
Unit
V
°C
°C
°C
CAPACITANCE
Ta = +25°C
Parameter
OE# capacitance
WE
1-4
# capacitance
HIP (PGA) H1
CQFP G2U/G2L
CS
1-4
# capacitance
Data# I/O capacitance
Address input capacitance
Symbol
C
OE
C
WE
Conditions
V
IN
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
Max Unit
50
pF
pF
20
15
20
pF
20
pF
50
pF
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may
overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins
is Vcc + 0.5V. During voltage transitions, outputs may overshoot to V
CC
+ 2.0 V for periods of up
to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot
Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may
overshoot to 13.5 V for periods up to 20ns.
C
CS
C
I/O
C
AD
V
IN
= 0V, f = 1.0 MHz
V
I/O
= 0V, f = 1.0 MHz
V
IN
= 0V, f = 1.0 MHz
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS – CMOS COMPATIBLE
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
V
CC
Static Current
Input High Voltage
Input Low Voltage
Voltage for Auto Select and Sector Protect
Output Low Voltage
Output High Voltage
Output High Voltage
Low V
CC
Lock Out Voltage
Symbol
I
LI
I
LOx32
I
CC1
I
CC2
I
CC3
I
CC4
V
IH
V
IL
V
ID
V
OL
V
OH1
V
OH2
V
LKO
Conditions
V
CC
= V
CC MAX
, V
IN
= GND to V
CC
V
CC
= V
CC MAX
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, V
CC
= V
CC MAX
CS# = V
IL
, OE# = V
IH
, V
CC
= V
CC MAX
V
CC
= V
CC MAX
, CS# = V
CC
±0.5V, OE# = V
IH
, f = 5MHz
V
CC
= 5.5, CS# = V
IH
Min
Max
10
10
140
200
6.5
0.6
V
CC
+ 0.3
+0.8
12.5
0.45
Unit
μA
μA
mA
mA
mA
mA
V
V
V
V
V
V
V
2.0
-0.5
11.5
I
OL
= 8.0 mA, V
CC
= V
CC MIN
I
OH
= -2.5 mA, V
CC
= V
CC MIN
I
OH
= -100
μA,
V
CC
= V
CC MIN
0.85 x V
CC
V
CC
-0.4
3.2
NOTES:
1. I
CC
current is typically less than 8mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
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4335.15E-0816-ss-WF128K32-XXX5
WF128K32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS# CONTROLLED
Parameter
Write Cycle Time
WE# Setup Time
CS# Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
WE# Hold from WE# High
CS# Pulse Width High
Duration of Programming Operation
Duration of Erase Operation
Read Recovery before Write
Chip Programming Time
Symbol
Min
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHWH
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
WH
t
CPH
50
0
25
0
25
0
40
0
20
14
2.2
0
12.5
60
-50
Max
Min
60
0
30
0
30
0
45
0
20
14
2.2
0
12.5
60
-60
Max
Min
70
0
35
0
30
0
45
0
20
14
2.2
0
12.5
60
-70
Max
Min
90
0
45
0
45
0
45
0
20
14
2.2
0
12.5
60
-90
Max
Min
120
0
50
0
50
0
50
0
20
14
2.2
0
12.5
60
-120
Max
Min
150
0
50
0
50
0
50
0
20
14
2.2
0
12.5
60
-150
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
ns
sec
Unit
FIGURE 4 – AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
I
OL
Current Source
D.U.T.
C
eff
= 50 pf
V
Z
1.5V
(Bipolar Supply)
I
OH
Current Source
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
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4335.15E-0816-ss-WF128K32-XXX5
WF128K32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (min)
Sector Erase Time
Read Recovery Time Before Write
V
CC
Setup Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (1)
1.
For Toggle and Data Polling.
Symbol
Min
t
AVAV
t
ELWL
t
WLWH
t
AVWL
t
DVWH
t
WHDX
t
WLAX
t
WHEH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
VCS
t
OES
t
OEH
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
CH
t
WPH
50
0
25
0
25
0
40
0
20
14
2.2
0
50
-50
Max
Min
60
0
30
0
30
0
45
0
20
14
60
2.2
0
50
12.5
0
10
0
10
-60
Max
Min
70
0
35
0
30
0
45
0
20
14
60
2.2
0
50
12.5
0
10
-70
Max
Min
90
0
45
0
45
0
45
0
20
14
60
2.2
0
50
12.5
0
10
-90
Max
Min
0
50
0
50
0
50
0
20
14
60
2.2
0
50
12.5
0
10
-120
Max
Min
0
50
0
50
0
50
0
20
14
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
120
150
60
2.2
0
50
60
sec
ns
μs
12.5
0
10
12.5
sec
ns
ns
AC CHARACTERISTICS – READ ONLY OPERATIONS
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
OE# to Output Valid
Chip Select to Output High Z (1)
OE# High to Output High Z (1)
Output Hold from Address, CS# or OE# Change,
whichever is
fi
rst
1.
Guaranteed by design, not tested.
Symbol
Min
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
0
50
-50
Max
50
50
25
20
20
0
Min
60
-60
Max
60
60
30
20
20
0
Min
70
-70
Max
70
70
35
20
20
0
Min
90
-90
Max
90
90
40
25
25
-120
Min
Max
120
120
120
50
30
30
0
-150
Min
Max
150
150
150
55
35
35
0
Unit
ns
ns
ns
ns
ns
ns
ns
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4335.15E-0816-ss-WF128K32-XXX5
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