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HS2G

Description
2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size36KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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HS2G Overview

2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA

HS2G Parametric

Parameter NameAttribute value
package instructionR-PDSO-C2
Reach Compliance Codeunknow
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage400 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Base Number Matches1
HS2A thru HS2M
SURFACE MOUNT
GLASS HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Diffused junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 2.0
Amperes
SMB
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
.096(2.44)
.084(2.13)
MECHANICAL DATA
Case: Molded Plastic
Polarity:Color band denotes cathode
Weight: 0.003 ounces,0.093 grams
Mounting position: Any
.060(1.52)
.030(0.76)
.220(5.59)
.200(5.08)
.008(.203)
.002(.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 2.0A DC(Note1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
@T
J
=100℃
@T
A
=50
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
HS2A
50
35
50
HS2B
100
70
100
HS2D
200
140
200
HS2G
400
280
400
2.0
HS2J
600
420
600
HS2K
800
560
800
HS2M
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
T
RR
C
J
R
θJA
T
J
T
STG
50
50
1.0
60
1.3
5.0
100
75
30
25
-50 to +150
-50 to +150
1.7
A
V
uA
nS
pF
℃/W
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured with I
F
=0.5A,I
R
=1A
,I
RR
=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient
~ 107 ~

HS2G Related Products

HS2G HS2D
Description 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
package instruction R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknow unknown
application EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1 V
JESD-30 code R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 60 A 60 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 400 V 200 V
Maximum reverse current 5 µA 5 µA
Maximum reverse recovery time 0.05 µs 0.05 µs
surface mount YES YES
Terminal form C BEND C BEND
Terminal location DUAL DUAL

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