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HS3GB

Description
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size38KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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HS3GB Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA

HS3GB Parametric

Parameter NameAttribute value
MakerHY Electronic
package instructionR-PDSO-C2
Reach Compliance Codeunknown
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage400 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
HS3AB thru HS3MB
SURFACE MOUNT
GLASS HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Diffused junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 3.0
Amperes
SMB
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
.096(2.44)
.084(2.13)
MECHANICAL DATA
Case: Molded Plastic
Polarity:Color band denotes cathode
Weight: 0.003 ounces,0.093 grams
Mounting position: Any
.060(1.52)
.030(0.76)
.220(5.59)
.200(5.08)
.008(.203)
.002(.051)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 3.0A DC(Note1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25℃
@T
J
=100℃
@T
A
=55
SYMBOL HS3AB HS3BB HS3DB HS3GB HS3JB HS3KB HS3MB
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
T
RR
C
J
R
θJA
T
J
T
STG
50
50
1.0
150
1.3
5.0
100
75
30
20
-50 to +150
-50 to +150
1.7
A
V
uA
nS
pF
℃/W
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1.Measured with I
F
=0.5A,I
R
=1A
,I
RR
=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient
~ 111 ~

HS3GB Related Products

HS3GB HS3DB
Description 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
Maker HY Electronic HY Electronic
package instruction R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
application EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1 V
JESD-30 code R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak forward current 100 A 100 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 400 V 200 V
Maximum reverse current 5 µA 5 µA
Maximum reverse recovery time 0.05 µs 0.05 µs
surface mount YES YES
Terminal form C BEND C BEND
Terminal location DUAL DUAL

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